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Preparation method of ZnO monocrystal nanotube array

A single-crystal nano-array technology, which is applied in the direction of single-crystal growth, nanotechnology, and single-crystal growth, can solve the problems of ZnO nanotube chaotic lodging arrangement, difficult micro-processing technology, and poor crystallinity of products, etc. Research value and application prospect, economical and convenient operation, high crystallinity effect

Active Publication Date: 2016-01-06
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above methods all have limitations to varying degrees.
For example, the equipment and raw materials used in the MOCVD method are very expensive; the two-step hydrothermal synthesis method is complicated and cumbersome, and the crystallinity of the product is not good; Devices based on a single ZnO nanotube, the signal of this device is very weak, and the microfabrication process is difficult and time-consuming

Method used

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  • Preparation method of ZnO monocrystal nanotube array
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  • Preparation method of ZnO monocrystal nanotube array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A preparation method of a ZnO single crystal nanotube array, the steps are as follows:

[0033] 1. Weigh 1g of zinc powder with a purity of 99.9% and put it into a ceramic boat, and then place the ceramic boat in the heating zone of the tube furnace to ensure that the zinc powder is located in the high-temperature heating zone of the heating zone;

[0034] 2. Place the substrate molybdenum mesh 5cm away from the zinc powder downstream of the heating zone;

[0035] 3. Turn on the mechanical pump, and when the pressure in the furnace drops to 5Pa, pass 30 sccm of compressed air into the tube furnace, and control the pressure at 200Pa;

[0036] 4. Raise the heating zone of the tube furnace to 600°C, the heating rate is 15°C / min, and the reaction time is 0.5 hours;

[0037] 5. After the reaction is over, after the tube furnace cools down to room temperature naturally, the substrate is taken out, and neatly arranged arrays of ZnO single crystal nanotubes grow on the substra...

Embodiment 2

[0045] A preparation method of a ZnO single crystal nanotube array, the steps are as follows:

[0046]1. Weigh 1.2g of zinc powder with a purity of 99.9% and put it into a ceramic boat, and then place the ceramic boat in the heating zone of the tube furnace to ensure that the zinc powder is located in the high-temperature heating zone of the heating zone;

[0047] 2. Place the substrate silicon wafer 10cm away from the zinc powder downstream of the heating zone;

[0048] 3. Turn on the mechanical pump, and when the pressure in the furnace drops to 1Pa, pass 20sccm of compressed air into the tube furnace, and control the pressure at 100pa;

[0049] 4. Raise the heating zone of the tube furnace to 700°C, the heating rate is 15°C / min, and the reaction time is 1 hour;

[0050] 5. After the reaction is over, after the tube furnace is naturally cooled to room temperature, the sample is taken out, and a neatly arranged array of ZnO single crystal nanotubes grows on the substrate.

Embodiment 3

[0052] A preparation method of a ZnO single crystal nanotube array, the steps are as follows:

[0053] 1. Weigh 2g of zinc powder with a purity of 99.9% and put it into a ceramic boat, and then place the ceramic boat in the heating zone of the tube furnace to ensure that the zinc powder is located in the high-temperature heating zone of the heating zone;

[0054] 2. The substrate sapphire sheet is placed downstream of the heating zone at a distance of 20 cm from the zinc powder; the present invention adopts nickel mesh, silicon sheet, ceramic sheet or quartz sheet substrate to achieve the same effect.

[0055] 3. Turn on the mechanical pump, and when the pressure in the furnace drops to 0.1 Pa, pass 10 sccm of compressed air into the tube furnace, and control the pressure at 50 Pa;

[0056] 4. Raise the heating zone of the tube furnace to 800°C, the heating rate is 25°C / min, and the reaction time is 2 hours;

[0057] 5. After the reaction is over, after the tube furnace cools...

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Abstract

The invention discloses a preparation method of a ZnO monocrystal nanotube array. The method includes the following steps of firstly, placing zinc powder in a container, and placing the container and a substrate in a tube furnace; secondly, vacuumizing the tube furnace, and filling the tube furnace with compressed air; thirdly, heating the tube furnace, and conducting natural cooling after reactions; fourthly, taking out the substrate, wherein substances grown on the substrate are the ZnO monocrystal nanotube array. The method is economical, convenient to use and high in controllability and repeatability. Prepared ZnO nanotubes are thin in pipe wall, high in crystallinity and neat in arrangement, and have wide research value and application prospects in the fields of solar cells, photocatalysis, biology and gas sensors and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials. More specifically, it relates to a preparation method of a ZnO single crystal nanotube array. Background technique [0002] In 1991, Japanese scientist Iijima Sumio first reported the discovery of carbon nanotubes (IijimaS. enthusiasm for research. Nanotubes have a more prominent specific surface area enhancement effect than nanorods, which is of great significance for improving the efficiency of photochemical and photophysical processes. For example, high specific surface area can enhance the ability of materials to adsorb chemical substances, absorb light and limit light scattering, which is beneficial to improve the speed of catalytic reaction and the sensitivity to light absorption (VayssieresL, et al.Three-dimensional array of highly orientedcrystalline ZnOmicrotubes[J].ChemistryofMaterials,2001, 13(12):4395-4398). People are also trying to prepare tubular structures of o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B23/00B82Y40/00
Inventor 孟祥敏王磊黄兴夏静
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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