Coupling window heating device and reaction chamber using it

Abstract

The invention provides a coupling window heating device and a reaction cavity employing the same. The device comprises an edge heating unit and a central heating unit, which respectively heat an edge region of a coupling window and a central region of the coupling window. The central heating unit comprises an annular protection plate which is disposed at the periphery of the coupling window, and forms an air circulating space through enclosing. The central heating unit also comprises a heating cover which is disposed on the upper surface of the coupling window, and forms a heating space with a central region of the upper surface. The heating cover is also provided with an air outlet, and the air outlet is used for enabling heated air to be communicated with the air circulating space. The central heating unit also comprises an air circulating mechanism which is used for extracting and heating air in the air circulating space, and enables the heated air to be conveyed to the interior of the heating space. The device provided by the invention not only can achieve the uniform heating of the coupling window, but also can guarantee the normal starting of plasma.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a heating device for a coupling window and a reaction chamber using the heating device. Background technique [0002] In the semiconductor etching process, a large number of parameters of the reaction chamber need to be strictly controlled to ensure high-quality process results. For the plasma etching process, it is especially necessary to precisely control the temperature of the reaction chamber, because the etching process result is highly sensitive to the temperature fluctuation in the plasma processing system, and the accuracy of the temperature directly affects the uniformity of the etching rate and process stability. [0003] In a typical plasma reaction chamber, only the temperature of the chamber side wall and the electrostatic chuck can be precisely controlled, but the temperature of the coupling window at the top of the chamber cannot be controlled ...

AI Technical Summary

Problems solved by technology

However, since quartz material is a poor conductor of heat, the heat generated by the heating band 15 needs to be conducted from the outer circumference of the coupling window 12 to its inside, which makes a larger temperature gradient in the radial direction of the coupling window 12, thereby Not only can't meet the requirements of the process for temperature control uniformity, but also affect the service life of the quartz cover

Images