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A kind of method utilizing polysilicon by-product to prepare chlorodisilane

A technology of chlorodisilane and trichlorodisilane, which is applied in the direction of halosilane and silicon halide compounds, and can solve problems such as danger

Active Publication Date: 2017-12-22
宁夏胜蓝化工环保科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing knowledge tells us that the mixture of hydrochlorodisilane and gaseous oxidant will form an explosive reaction. Therefore, the behavior of introducing chlorine in the rectification process described in patent CN01803007 is extremely dangerous

Method used

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Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0033] A method utilizing polysilicon by-products to prepare chlorodisilane, comprising the following steps:

[0034](1) 100 parts of the by-product high boilers containing aluminum trichloride in the polysilicon production process were kept at -5°C for 80 hours to form crystals, and the crystals were separated by precision filtration;

[0035] (2), add 0.01 part of N'-[5-[[4-[[5-(acetylhydroxylamino)pentyl]ammonia]-1,4 -Dioxybutyl]hydroxylamine]pentyl]-N-(5-aminopentyl)-N-hydroxysuccinamide (CAS No. 70-51-9) to form a mixed system;

[0036] (3), heating to raise the temperature of the mixing system in step (2) to 30° C., and keeping the temperature at 30° C. for 10 hours to form a mixing system containing non-volatile aluminum compounds;

[0037] (4), the mixed system in the step (3) is distilled under normal pressure to obtain 90 parts of mixed chlorodisilanes not containing aluminum trichloride;

[0038] (5) Rectifying the mixed chlorodisilane obtained in step (4) to obta...

specific Embodiment 2

[0041] A method utilizing polysilicon by-products to prepare chlorodisilane, comprising the following steps:

[0042] (1) 100 parts of high boilers containing aluminum trichloride, which are by-produced in the polysilicon production process, are kept at -50°C for 10 hours to form crystals, and the crystals are separated by precision filtration;

[0043] (2) Add 0.1 part of 1,2-dimethyl-3-hydroxy-4-pyridone (CAS No. 30652-11-0) to the high boiler from which crystals have been removed in step (1) to form a mixed system ;

[0044] (3), heating to raise the temperature of the mixed system in step (2) to 120° C., and keeping the temperature at 120° C. for 5 hours to form a mixed system containing non-volatile aluminum compounds;

[0045] (4), the mixed system in step (3) is distilled under the situation of absolute pressure 0.2MPa to obtain 98 parts of mixed chlorodisilanes not containing aluminum trichloride;

[0046] (5) Rectifying the mixed chlorodisilane obtained in step (4) ...

specific Embodiment 3

[0049] A method utilizing polysilicon by-products to prepare chlorodisilane, comprising the following steps:

[0050] (1) 100 parts of high boilers containing aluminum trichloride, which are by-produced in the polysilicon production process, are kept at -25°C for 40 hours to form crystals, and the crystals are separated by precision filtration;

[0051] (2), adding 0.05 parts of 7-iodo-8-hydroxyquinoline-5-sulfonic acid (CAS No. 547-91-1) to the high boiler from which crystals have been removed in step (1) to form a mixed system;

[0052] (3), heating to raise the temperature of the mixed system in step (2) to 70° C., and keeping the temperature at 70° C. for 8 hours to form a mixed system containing non-volatile aluminum compounds;

[0053] (4), the mixed system in step (3) is distilled under the situation of 7 absolute pressure 0.1MPa to obtain 95 parts of mixed chlorodisilanes not containing aluminum trichloride;

[0054] (5) Rectifying the mixed chlorodisilane obtained in...

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PUM

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Abstract

The invention relates to a method for preparing chlorodisilane by using polysilicon by-products, which comprises the following steps: 1. Insulating high-boilers containing aluminum trichloride produced in the polysilicon production process to form crystals and separating the crystals ; 2. Add additives to the high boiler from which crystals have been removed in step 1 to form a mixed system; 3. Heat the temperature of the mixed system in step 2 to 30°C to 120°C and keep it warm to form a non-volatile aluminum Compound mixed system; 4. Distill the mixed system in step 3 under normal pressure or absolute pressure less than 0.2MPa to obtain mixed chlorodisilane without aluminum trichloride; 5. Mix the mixed chlorodisilane obtained in step 4 Disilane rectification yields single-component chlorodisilane. The present invention has the following effects: 1. Efficient removal of metal chlorides in high boilers; 2. The photochlorination method is selected to carry out chlorination in the liquid phase, which can make the process safer.

Description

technical field [0001] The invention belongs to the field of chemical industry and relates to a method for preparing chlorodisilane, in particular to a method for preparing chlorodisilane by using polysilicon by-products. Background technique [0002] Chlorodisilane, especially hexachlorodisilane, is an important silicon source material in the field of modern electronics manufacturing. For example, in the patent CN200480028369 of Tokyo Yili Technology Co., Ltd., silicon-containing films are deposited with hexachlorodisilane; SMIC Integrated Circuit Manufacturing (Beijing) Co., Ltd. used a mixed gas containing hexachlorodisilane as a silicon source in its patent CN200810113992; Canon Co., Ltd. used hexachlorodisilane as a raw material gas in its patent CN201210375335 to form by low-pressure chemical vapor deposition Silicon nitride film. With the rapid development of high-precision electronic devices, the demand for hexachlorodisilane in the electronics industry is increasin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 沈俊赵燕
Owner 宁夏胜蓝化工环保科技有限公司