Substrate

Abstract

A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.

Description

technical field [0001] The present invention relates to a substrate having a dielectric film thereon, a method of depositing a dielectric film on the substrate and related apparatus. Background technique [0002] Many devices are fabricated by building up multiple thin dielectric, semiconducting, and metal layers on a substrate such as a silicon wafer. However, the deposition of these layers results in a build-up of stress. The net stress generated at each stage leads to constraints in subsequent processing steps. For example, the resulting net stress can lead to warping of the wafer, which can eventually lead to wafer loss due to handling issues. A further problem is layer cracking, which in turn leads to reduced yield and wafer loss. The net stress experienced by the wafer may be tensile or compressive. [0003] It is standard practice in semiconductor wafer fabrication to minimize wafer warpage. Another standard practice is to deposit layers without creating cracks a...

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Problems solved by technology

However, it is currently not possible to deposit such thick, uniform silica layers at temperatures of 280°C or lower.

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