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Resistive random access memory device and operation method therefor

A resistive random and storage device technology, applied in information storage, static memory, digital memory information, etc., can solve problems affecting bit writing, resistance value difference of conductive filaments, transistor bias potential shift, etc. , to achieve the effect of improving reliability

Active Publication Date: 2016-02-10
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, process variations often occur in semiconductor manufacturing processes. For example, if the thickness of the oxide layer or the concentration of ion doping is not consistent, the bias potential of the transistor will be shifted, and the resistance value of the formed conductive filament will be different. , which in turn affects the writing of bits

Method used

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  • Resistive random access memory device and operation method therefor
  • Resistive random access memory device and operation method therefor
  • Resistive random access memory device and operation method therefor

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Embodiment Construction

[0029] figure 1 It is a schematic diagram of a resistive random access memory device according to an embodiment of the present invention, please refer to figure 1 . The resistive random access memory device includes a plurality of resistive random access memory cells 102 and a plurality of current sources 104, and the current sources 104 are respectively coupled between corresponding bit lines BL and corresponding resistive random access memory cells 102 , to simplify the description, figure 1 Only a single RRAM cell 102 and its corresponding current source 104 are shown. The resistance value of the resistive random access memory cell 102 can be set to a low-impedance state (representing a logic level “1”) or a high-impedance state (representing a logic level “0”) according to different data to be written. . Before writing data, the resistive random access memory cell 102 will be set to a low impedance state during the formation period, and then change the resistive random...

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Abstract

The invention discloses a resistive random access memory device and an operation method therefor. During a formation period, a preset bias current is provided for each resistive random access memory cell, so as to homogenize impedance values of all the resistive random access memory cells, thereby improving reliability of data access.

Description

technical field [0001] The present invention relates to a memory device, and more particularly to a resistive random access memory device and an operating method thereof. Background technique [0002] Non-volatile memory has the advantage that the stored data will not disappear after power failure, so it is a necessary memory element for many electronic products to maintain normal operation. At present, resistive random access memory (Resistive Random Access Memory; RRAM) is a non-volatile memory actively developed in the industry, which has the advantages of low write operation voltage, short write and erase time, long memory time, non-destructive read , multi-state memory, simple structure, and small required area, etc., have great application potential in future personal computers and electronic devices. [0003] Resistive random access memory uses the movement of oxygen vacancies or oxygen ions to form conductive filaments, and the conductive filaments are broken and re...

Claims

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Application Information

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IPC IPC(8): G11C13/00
Inventor 林孟弘沈鼎瀛吴伯伦
Owner WINBOND ELECTRONICS CORP