Wafer surface bonding technology and semiconductor device structure

Abstract

The invention relates to the technical field of semiconductor device preparation, and particularly relates to a wafer surface bonding technology and a semiconductor device structure. A thin film layer is deposited on the surface of a wafer, then a dielectric layer including H+ ions is deposited, and finally bonding of the H+ ions in the dielectric layer and wafer Si interface dangling bonds is facilitated through an Anneal technology so that the degree of bonding of the wafer Si interface dangling bonds is enhanced. With application of the technical scheme, Dark Current and BLC performance of the device can be obviously improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a wafer surface bonding process and a semiconductor device structure. Background technique [0002] During the wafer manufacturing process, due to the lack of bonded Si atoms at the Si interface and the existence of unbonded electrons at the interface Si atoms, electrically active dangling bonds are formed at the Si interface (generally, the crystal lattice suddenly terminates at the surface, and the Each atom of the outermost layer will have an unpaired electron, that is, an unsaturated bond is arranged, and this bond is called a dangling bond (Traps for short), and the bonding degree of this dangling bond is relatively low. There are fewer sources of atoms for bond formation and lack of bonding power, resulting in a lower degree of bonding of dangling bonds between Si interfaces, resulting in poor performance of the device such as DarkCurrent (dark curr...

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Problems solved by technology

[0002] During the wafer manufacturing process, due to the lack of bonded Si atoms at the Si interface and the existence of unbonded electrons at the interface Si atoms, electrically active dangling bonds are formed at the Si interface (generally, the crystal lattice suddenly terminates at the surface, and the Each atom of the outermost layer will have an unpaired electron, that is, an unsaturated bond is arranged, and this bond is called a dangling bond (Traps for short), and the bonding degree of this dangling bond is relatively low. There are fewer sources of atoms for bond formation and lack of bonding power, resulting in a lower degree of bonding of dangling bonds between Si interfaces, resulting in poor performance of the device such as DarkCurrent (dark current) and BLC (backlight compensation function)

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