On-chip lead-out structure and manufacturing method of a chip

Abstract

The invention relates to an on-chip wire direct lead-out structure of a chip and a making method thereof, and belongs to the field of electronic devices. The making method is characterized by comprising the following steps: using a micro machining method to form a wire accommodating slot on the surface of a silicon wafer, wherein the slot is V-shaped, trapezoidal, U-shaped, arc or square or the slot is a combined groove, pit or through hole; and then, making a metal electrode on the slot, thus obtaining a direct lead-out structure for wires from hundred microns to millimeter level. A direct lead-out structure for wires from hundred microns to millimeter level realized on a chip is provided. Therefore, the connection strength of a wire and a chip is improved significantly, and the problem of circuit breaking caused by damage to the connection of a wire and a chip due to the change in the external environment such as temperature or pressure and personnel operation is avoided.

Description

technical field [0001] The invention relates to a direct lead-out structure and a manufacturing method of an on-chip wire on a chip, belonging to the category of electronic devices. Background technique [0002] In the process of IC chip or MEMS chip packaging, in order to maintain a certain degree of flexibility or freedom of the product, or to meet the application requirements at a specific volume and temperature, sometimes it is not possible to use a tube or plastic package for electrical connection, only Use wire leads directly on the chip to realize electrical signal collection or power supply to the chip. In this way, in the process of packaging or post-packaging operation and use, due to factors such as high temperature and vibration, the joint between the wire and the chip will often be subjected to huge stress. Since the diameter of the wire is thicker than that of the chip, and the surface of the chip is smoother, heat welding, laser welding and other methods are ...

AI Technical Summary

Problems solved by technology

However, although these methods may temporarily realize the electrical connection between the wire and the device, due to the small soldering contact area, the solder is very easy to degrade and soften after being used at high temperature for a period of time; or the soldering point is stressed due to bending and other actions, thus appearing The bonding force between the metal film on the chip and the substrate decreases, falls off, and there is a virtual soldering

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