Planetary rotary device for epitaxial growth of silicon carbide

A technology of epitaxial growth and planetary rotation, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of uneven rotation of the workpiece carrier plate, difficulty in design and manufacture, and frictional force changes, so as to improve stability and Continuity, reduced design and manufacturing costs, and uniform temperature effects

Active Publication Date: 2016-03-09
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

First of all, due to the effect of the airflow field and thermal field in the reaction chamber, the gas that drives the workpiece carrier to rotate will be unstable, and its friction will change, which will cause the workpiece carrier to rotate unstable or even unable to rotate; secondly, the gas that determines the flow path The diversion groove is very critical. The trajectory of the diversion groove is spindle streamlined. Its design and manufacture are very difficult. The processing of the diversion groove requires a five-axis CNC machining center.

Method used

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  • Planetary rotary device for epitaxial growth of silicon carbide
  • Planetary rotary device for epitaxial growth of silicon carbide
  • Planetary rotary device for epitaxial growth of silicon carbide

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Embodiment Construction

[0026] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0027] Figure 1 to Figure 6 It shows an embodiment of the planetary rotation device for epitaxial growth of silicon carbide in the present invention, including a base 1, a central shaft 2 and a planetary disk 3, the central shaft 2 is mounted on the base 1, and the planetary disk 3 is mounted on the central shaft 2 and can rotate with the central rotating shaft 2, the planetary disc 3 is arranged with a plurality of workpiece carriers 4 along the circumference, and the base 1, the central rotating shaft 2 and the planetary disc 3 are provided with the outer circumference of each workpiece carrier 4 and are ventilated. Afterwards, each workpiece carrier plate 4 is driven to rotate the air intake chamber 5. When working, the silicon carbide wafer is carried on the workpiece carrier plate 4, and the planetary disc 3 drives each workpie...

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Abstract

The invention discloses a planetary rotary device for epitaxial growth of silicon carbide. The device comprises a base, a central rotary shaft and a planetary disc, wherein the central rotary shaft is arranged on the base; the planetary disc is mounted on the central rotary shaft and can rotate along the central rotary shaft; a plurality of workpiece support plates are distributed at the periphery of the planetary disc; air inlet orifices for communicating with the peripheries of the workpiece support plates and driving the workpiece support plates to rotate after ventilation are formed on the base, the central rotary shaft and the planetary disc. The device has the advantages of being simple in structure, low in cost and easy to mould, and the rotary stability and continuity can be greatly improved.

Description

technical field [0001] The invention mainly relates to the silicon carbide epitaxial growth technology, in particular to a planetary rotation device for the silicon carbide epitaxial growth. Background technique [0002] At present, power devices are developing towards the third-generation semiconductor devices. As a typical representative of the third-generation semiconductor materials, silicon carbide (SiC) is one of the more mature wide-bandgap semiconductor materials at present. Compared with the second-generation semiconductor materials, it has the advantages of wide band gap, high breakdown field strength, high thermal conductivity, high saturation electron drift velocity and high bonding energy. Semiconductor materials with great potential can effectively solve the problems of temperature and power in the first and second generation semiconductors. [0003] There are currently three main methods of SiC epitaxial growth: chemical vapor deposition (CVD), molecular beam...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/12C30B29/36
CPCC30B25/12C30B29/36
Inventor 陈特超胡凡程文静陈庆广舒勇东毛朝斌龙长林
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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