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Preparation method for four-junction solar cell based on GaInNAs material

A technology of solar cells and junction cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as crystal quality decline, inability to obtain defective GaInNAs crystal layers, etc., to enhance lattice stability and reduce the process of substrate transfer , the effect of reducing the possibility of pollution

Active Publication Date: 2016-03-16
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to achieve a band gap of about 1.0eV, 2.5%-3.0% of N atoms need to be incorporated into GaAs, which will cause a sharp decline in crystal quality and cannot obtain a GaInNAs crystal layer with fewer defects.

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  • Preparation method for four-junction solar cell based on GaInNAs material
  • Preparation method for four-junction solar cell based on GaInNAs material
  • Preparation method for four-junction solar cell based on GaInNAs material

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Embodiment Construction

[0037] In order to further understand the invention content, characteristics and effects of the present invention, the following examples are given hereby, but the embodiments of the present invention are not limited thereto, and the detailed description is as follows:

[0038] This embodiment is a preparation method of a four-junction solar cell based on GaInNAs material, comprising the following steps:

[0039] (1) providing a p-type Ge substrate;

[0040] The p-Ge substrate with [001] crystal orientation has a doping concentration of about 2×10 17 -5×10 17 cm -3 ; Ultrasonic removal of dirt particles on the surface of the GaAs substrate; washing with acetone and ethanol to remove surface organic matter; put the Ge substrate at 40-70 °C with a volume ratio of HF:H 2 o 2 :H 2 Etching in a mixed solution of O (1:8:1) for 1-2 minutes to remove surface oxides and organic matter; rinsing with deionized water; and drying the cleaned Ge substrate with filtered dry nitrogen. S...

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Abstract

The invention discloses a preparation method for a four-junction solar cell based on a GaInNAs material, comprising the steps of treating a substrate, growing by MOCVD and adding a superlattice buffer layer. Compared with the existing four-junction solar cell preparation method, the preparation method provided by the invention adopts the superlattice buffer layer, the high-quality GaInNAs material can be prepared in the MOCVD, and thereby the prepared four-junction solar cell is high in crystalline quality, thus achieving higher overall efficiency. In addition, compared with the MBE method, the MOCVD method has a lower cost, and can lay a foundation for the industrial production of the four-junction cells.

Description

technical field [0001] The invention relates to the field of multi-junction laminated high-efficiency solar cells, in particular to a preparation method of a GaInNAs material-based four-junction solar cell. Background technique [0002] With the rapid development of the solar photovoltaic power generation industry and market, and driven by the demand for space vehicle energy systems, photovoltaic technology has continuously made important breakthroughs. The production technology of high-efficiency solar cells based on III-V semiconductor compounds is becoming more and more mature, making them have broad application prospects in space engineering and terrestrial photovoltaics. The frequency range of the solar spectrum is very wide, and the solar cell absorbing layer will absorb photons with energy greater than the bandwidth of the absorbing layer material, convert them into photogenerated carriers, and generate voltage. For a material with a higher bandwidth, due to the smal...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0725H01L31/0735
CPCH01L31/0725H01L31/0735H01L31/1848Y02E10/544Y02P70/50
Inventor 石璘刘如彬高鹏薛超刘丽蕊姜明序张无迪肖志斌孙强
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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