Preparation method of ito transparent conductive layer, LED chip and light emitting diode
A transparent conductive layer and LED chip technology, which is applied to circuits, electrical components, semiconductor devices, etc., can solve the problems of low brightness and high forward voltage of LED chips
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[0025] refer to figure 1 , a preferred embodiment of the present invention provides a method for preparing an ITO transparent conductive layer, comprising the following steps: performing n times of coating on the surface of the LED chip, subsequent coating is carried out on the film formed by the previous coating, n times of coating to obtain The corresponding thin films form an ITO transparent conductive layer, and the thickness of each thin film decreases layer by layer according to the order of coating, 3≤n≤xx.
[0026] The preparation method of the above-mentioned ITO transparent conductive layer is coated on the surface of the LED chip n times, and the thickness of each film is reduced layer by layer according to the order of the coating. The ITO transparent conductive layer is constructed from a multi-layer film. (the contact resistance between the ITO transparent conductive layer and the epitaxial layer) has a small increase, so the forward voltage rises small and the b...
Embodiment 1
[0045] 1. Clean the surface of the LED chip.
[0046] 2. The electron beam vacuum coating equipment is used to vapor-deposit the ITO transparent conductive layer on the surface of the chip in three steps.
[0047] first step
[0048] Set the ITO film thickness as H 1 is 2000 Å, the deposition rate V 1 is 5 angstroms / sec, and the coating time is T 1 for 400 seconds, oxygen flow Q 1 is 3 ml / min, the temperature during coating is 250 degrees, and the chamber pressure during coating is 3.0×10 -6 Tor, where H 1 =V 1 *T 1 .
[0049] After the coating is completed, an interval of 5 minutes is allowed to stabilize the atmosphere in the chamber.
[0050] second step
[0051] Set ITO film thickness H 2 is 1360 Å, the deposition rate V 2 is 4.25 Å / s, the coating time T 2 for 320 seconds, oxygen flow Q 2 is 2.7 ml / min, the temperature during coating is 265 degrees, and the chamber pressure during coating is 4.0×10 -6 Tor, where H 2 =V 2 *T 2 , V 2 =0.85V 1 ,T 2 =0.8T ...
Embodiment 2
[0061] 1. Clean the surface of the LED chip.
[0062] 2. The electron beam vacuum coating equipment is used to vapor-deposit the ITO transparent conductive layer on the surface of the chip in four steps.
[0063] first step
[0064] Set the ITO film thickness as H 1 is 1440 Å, the deposition rate V 1 is 0.6 Å / s, and the coating time is T 1 For 2400 seconds, the oxygen flow rate Q 1 6 ml / min, the temperature during coating is 350 degrees, and the cavity pressure during coating is 5.0×10 -6 support. where H 1 =V 1 *T 1 .
[0065] After the coating is completed, an interval of 8 minutes is allowed to stabilize the atmosphere in the chamber.
[0066] second step
[0067] Set ITO film thickness H 2 is 1003.68 Å, the deposition rate V 2 is 0.49 Å / s, the coating time T 2 For 1968 seconds, the oxygen flow Q 2 is 5.7 ml / min, the temperature during coating is 260 degrees, and the cavity pressure during coating is 4.0×10 -6 Tor, where H 2 =V 2 *T 2 , V 2 =0.82V 1 ,T ...
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