A kind of epitaxial structure and grating structure preparation method thereof

Abstract

The present invention discloses an epitaxial structure and a preparation method for a grating structure thereof. The epitaxial structure comprises a substrate and a waveguide layer laminated along a first direction on the substrate. In a second direction perpendicular to the first direction, the waveguide layer is divided into quantum well intermixing enhancement regions and quantum well intermixing suppression regions. The quantum well intermixing enhancement regions and the quantum well intermixing suppression regions are alternately arranged in a region in the second direction, so that a grating structure is formed due to that a refractive index of the quantum well intermixing enhancement regions and the quantum well intermixing suppression regions changes periodically in the second direction. According to the epitaxial structure and the preparation method for the grating structure thereof, the alternately arranged quantum well intermixing enhancement regions and the quantum well intermixing suppression regions form the grating structure, so as to avoid using a complex secondary epitaxy manufacturing process, thereby reducing the manufacturing cost; the effect of the secondary epitaxy manufacturing process on reliability and performance of a device is avoided; and a grating period can be regulated in a convenient and effective way.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an epitaxial structure with a grating structure and a method for preparing the grating structure without secondary epitaxy. Background technique [0002] At present, semiconductor lasers have been widely used in various aspects of national economy and people's livelihood, including daily electronic products, industrial processing, optical fiber communication, medical treatment, scientific research and national defense applications. [0003] Semiconductor lasers can generally be divided into DFB / DBR lasers and F-P cavity (Fabry-Perot cavity) lasers according to whether they have a wavelength locking function. Because the optical field of F-P cavity laser oscillates freely in its longitudinal direction, the output wavelength will change with the change of operating current and ambient temperature. The DFB / DBR laser has a Bragg grating structure, which can perform wave...

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Problems solved by technology

[0004] The current problems are: the secondary epitaxy process needs to go through the previous process of exposure and etching, the process is complicated, the manufacturing cost is high, and the reliability and performance of the device will also be affected by multiple processes.

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