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Sample stack structure and method for preparing the same

A stack structure and sample technology, applied in the field of sample stack structure and its preparation, can solve the problems of dangerous operation, time-consuming, curtain effect cannot be completely eliminated, etc.

Inactive Publication Date: 2016-03-30
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, sample tilt cannot completely rule out the curtain effect
While the back side grinding can completely eliminate the curtain effect, but to reduce the thickness of the sample at the beginning, it is not only time-consuming but also requires additional analysis of specific positions
As for polishing / dipping in acid to remove the top coat, the operation is quite dangerous and complicated

Method used

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  • Sample stack structure and method for preparing the same
  • Sample stack structure and method for preparing the same
  • Sample stack structure and method for preparing the same

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Embodiment Construction

[0079] The invention provides a sample stack structure and a method for preparing the sample stack structure. This novel method can completely eliminate the curtain effect, which is a combination of backside etching (backsidemilling) and cutting (dicing) techniques, and does not use sample tilting, backside polishing (backsidepolishing) or polishing / dipping in acid, therefore, the The above sample stack structure can achieve the purpose of eliminating the curtain effect by a simple method.

[0080] Figure 4 to Figure 13 A method for preparing the sample stack structure of the present invention is illustrated. In order to clearly describe the present invention, some drawings are shown in combination of top view and side view. First, if Figure 4 As shown, a wafer 100 is provided. The wafer 100 has different film layers, and the film layers are formed of different materials, such as oxide, nitride, metal or semiconductor material, such as silicon (Si) or doped silicon.

[...

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Abstract

The present invention provides a sample stack structure and a method for preparing the same. The sample stack structure has at least a substrate, an adhesive layer and a target layer. The target layer is directly sandwiched between the substrate and the adhesive layer.

Description

technical field [0001] The present invention relates to a method for forming a sample stack structure and a sample stack structure, in particular to a method for forming a sample stack structure using backside etching (backsidemilling) and cutting (dicing) processes, and samples formed by the method The stack structure can avoid the interference of the curtain effect. The sample stack has a target layer bonded to the spacer by an adhesive layer. Background technique [0002] As the size of components continues to be miniaturized, transmission electron microscopy (TEM) plays an important role in structural analysis of the integrated circuit (IC) industry, material characterization for process evaluation, and failure analysis. It is known that a high-quality TEM sample is one of the key factors for successful TEM analysis. For this reason, various cross-sectional transmission electron microscopy (XTEM) sample preparation techniques have been disclosed. [0003] The aforement...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28
CPCG01N1/286G01N2001/2886H01J37/261H01J37/3056H01J2237/31745H01L21/4814H01L21/486H01L21/78H01L23/5226H01L24/01
Inventor 罗建兴李秀庭
Owner MICRON TECH INC
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