A method for preparing gate dielectric on silicon carbide material
A gate dielectric, silicon carbide technology, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problem of low effective mobility of silicon carbide MOSFET devices, high interface state density of silicon carbide MOS, and low interface defect state density, etc. problem, to achieve the effect of increasing the carrier concentration, reducing the interface state density, and reducing the influence
Active Publication Date: 2019-02-26
重庆斯塞克科技有限公司
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] The technical problem to be solved by the present invention is that the existing silicon carbide MOS interface state density is large, resulting in low effective mobility of silicon carbide MOSFET devices and greatly limiting device performance; the present invention uses SiO 2 interface layer technology, using the N 2 Annealing technology in O environment forms SiO with low interface defect state density on the surface of silicon carbide 2 ; and using atomic layer deposition technology on SiO 2 Aluminum oxide dielectric is deposited on the interface layer, so as to realize the preparation of gate dielectric with low density of dielectric defect states on the surface of silicon carbide
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] This embodiment provides a method for preparing a gate dielectric material on a silicon carbide substrate, the method is as follows:
[0024] (1) First pass through the N on the surface of silicon carbide 2 3nm-thick silicon oxide is grown by annealing in an O environment, and the predetermined temperature is 1200°C;
[0025] (2) Then adopt the method of atomic layer deposition to prepare the Al2O3 dielectric thin film on the substrate completed in step (1) for 1 period, and the precursor adopts trimethylaluminum and water; One cycle of Al2O3 dielectric thin film, trimethylaluminum and ozone are used as the precursor; finally, nitrogen plasma is used to purge the surface of the dielectric;
[0026] (3) Cycle 10 times according to step (2);
[0027] (4) Finally, the silicon carbide wafer with the gate dielectric grown on the N 2 Anneal for 1 minute under O environment, and the predetermined temperature is 900°C.
[0028] In the above-mentioned embodiment, wherein ado...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a method for preparing gate dielectric on silicon carbide material, comprising: growing silicon oxide of 1 nanometer on silicon carbide surface under nitrous oxide environment through annealing mode; preparing aluminium oxide dielectric film of 1 nanometer through atom layer depositing method, wherein the precursor adopts trimethylaluminium and water, again preparing aluminium oxide dielectric film of 1 nanometer through the atom layer depositing method, wherein the precursor adopts trimethylaluminium and ozone, treating the surface by nitrogen plasma; circulating five times according to the step (2); and finally degrading under the nitrous oxide environment.
Description
field of invention [0001] The invention relates to the manufacture of semiconductor devices, especially the preparation technology of silicon carbide upper gate dielectric. Background of the invention [0002] In recent years, silicon carbide MOSFET device technology has continued to develop, using silicon oxide as the gate dielectric to passivate the surface of silicon carbide to make MOS devices, and using nitrogen oxide and N 2 Annealing in the O environment has shown very high MOS interface characteristics of silicon carbide, but the electron mobility on the surface of silicon carbide is still very low; with the continuous advancement of atomic layer deposition technology, aluminum oxide dielectric deposition is becoming more and more mature and stable. Depositing aluminum oxide as a gate dielectric by atomic layer deposition technology has become an important technical trend to solve the high density of defect states at the silicon carbide MOS interface. Contents of t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L29/6659
Inventor 刘丽蓉
Owner 重庆斯塞克科技有限公司