Wafer cutting method

Abstract

The invention relates to a wafer cutting method, and the method comprises the steps: A1, providing a wafer, and forming a trench in the wafer; A2, filling the trench with a temporarily selected material, so as to support the trench; A3, grinding of the back surface of the wafer, so as to expose the temporarily selected material; A4, removing the temporarily selected material, and exposing the trench, so as to complete the cutting of the wafer. In order to solve a problem that the grinding in the DRIE cutting technology causes the crack of the contour of the trench, the invention provides the new DRIE cutting method. In the method, the cavity of the trench is filled through temporary bonding glue after DRIE, the bonding glue is solidified through soft bake, and the back grinding is carried out, thereby enabling the edge of the wafer to be supported in a grinding process and not to be cracked. After grinding, a corresponding solvent is used for removing the temporary bonding glue, thereby solving a crack problem and improving the cutting efficiency and yield.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a wafer cutting method. Background technique [0002] In the manufacturing process of semiconductor devices, after circuits are formed in the wafer, the wafer needs to be diced. The dicing is a process of dividing the wafer into chips or grain units with complete circuit systems. [0003] At present, in the dicing process of deep reactive ion etching (DRIE), the DRIE step is first performed on the front side of the wafer to form deep trenches, and then the back grinding (Grinding) to deep reactive ion etching trenches (DRIEtrench) , exposing the groove to achieve the purpose of cutting (Dicing), such as figure 1 However, the cutting and pressure of the grinding wheel on the wafer during the grinding (Grinding) process can easily lead to severe chipping at the top edge of the deep reactive ion etching trench, such as figure 2 shown. [0004]...

AI Technical Summary

Problems solved by technology

[0003] At present, in the dicing process of deep reactive ion etching (DRIE), the DRIE step is first performed on the front side of the wafer to form deep trenches, and then the back grinding (Grinding) to deep reactive ion etching trenches (DRIEtrench) , exposing the groove to achieve the purpose of cutting (Dicing), such as figure 1 However, the cutting and pressure of the grinding wheel on the wafer during the grinding (Grinding) process can easily lead to severe chipping at the top edge of the deep reactive ion etching trench, such as figure 2 shown

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