Epitaxial growth equipment

Abstract

The invention provides epitaxial growth equipment. The epitaxial growth equipment comprises a reaction chamber, a control device and a measurement device, wherein the control device is connected with the measurement device and the reaction chamber; a to-be-grown epitaxial wafer is arranged on a growth carrier in the reaction chamber; the measurement device is arranged above a window of the reaction chamber and used for measuring the temperature and the wavelength of a current quantum well layer of the to-be-grown epitaxial wafer in real time and sending the temperature and the wavelength of the current quantum well layer to the control device; the control device is used for controlling the reaction chamber to grow the to-be-grown epitaxial wafer and adjusting the temperature of the reaction chamber when a next quantum well layer of the to-be-grown epitaxial wafer is grown according to the temperature and the wavelength of the current quantum well layer and preset reaction parameters including the target wavelength of the to-be-grown epitaxial wafer and a corresponding relationship of the wavelength and the temperature. The epitaxial growth equipment can increase the yield of the epitaxial wafers.

Description

technical field [0001] The invention relates to a light-emitting diode manufacturing technology, in particular to an epitaxial growth device. Background technique [0002] Wide bandgap materials represented by gallium nitride are the third-generation semiconductor materials after silicon and gallium arsenide. These wide bandgap materials can be grown on substrates to form epitaxial wafers for making light-emitting diodes, Lasers, detectors, high-frequency high-power transistors and other electronic devices, among which, the equipment for growing epitaxial wafers of such electronic devices is called epitaxial growth equipment. [0003] Existing epitaxial growth equipment includes a reaction chamber, wherein a growth carrier is arranged in the reaction chamber, a substrate is placed on the growth carrier, and a wide bandgap material is grown on the substrate by vapor phase epitaxy in the reaction chamber to form an epitaxial wafer. At present, the technology of the existing e...

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Problems solved by technology

[0005] The present invention provides an epitaxial growth equipment, which is used to solve the problems in the prior art that the temperature of the reaction chamber of the epitaxial growth equipment is set artificially by experience, resulting in a low yield of epitaxial wafers produced by the epitaxial growth equipment and waste of human resource costs. question

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