Semiconductor laser and fabrication method thereof

Abstract

The invention discloses a semiconductor laser and a fabrication method thereof. The semiconductor laser comprises an N-type electrode, a P-type electrode and a functional layer, wherein the N-type electrode and the P-type electrode are oppositely arranged; the functional layer is arranged between the N-type electrode and the P-type electrode; the functional layer comprises a substrate, an N-type cladding, an N-type optical limiting layer, an active region, a P-type optical limiting layer, a P-type cladding, an insulating layer and a P-type ohmic contact layer, which are sequentially arranged, in the first direction; the first direction is the direction that the N-type electrode points to the P-type electrode; the P-type electrode comprises a current injection region and a non-current injection region; and a hollow-out pattern is arranged at the position, opposite to the current injection region, of the insulating layer in the first direction, so that the P-type electrode and the P-type ohmic contact layer are electrically connected in the current injection region; and the semiconductor laser has the characteristics of a lateral divergence angle.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor devices, and more specifically, to a semiconductor laser and a manufacturing method thereof. Background technique [0002] Semiconductor lasers are widely used in medical, display, communication, material processing, and pumped solid-state lasers due to their many advantages such as small size, light weight, and high conversion efficiency. With the continuous expansion of application fields, people have put forward higher and higher requirements for the power and beam quality of semiconductor lasers. [0003] By optimizing the epitaxial structure design and improving the material growth, the fast axis divergence angle of the semiconductor laser has been greatly improved. The increase of the output power of the semiconductor laser can be achieved by the method of wide-strip electrical contact, but this structure makes the lateral output beam quality of the semiconductor laser poorer, and th...

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Problems solved by technology

[0005] However, compared with the traditional semiconductor laser, the semiconductor laser with the above structure has the problems of complicated manufacturing process, high manufacturing cost or limited power.

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