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Silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor

A technology of field effect transistors and biochemical sensors, which is applied in the field of device structure and process design, can solve the problems of unfixed distance and influence on measurement results, and achieve the effect of enhancing adhesion

Active Publication Date: 2016-05-04
NANKAI UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] In summary, searching the literature found that there is an important problem in the existing liquid gate graphene field effect transistor preparation methods: the reference electrode 4 in the liquid gate graphene field effect transistor cannot be connected with the graphene film 2, the source electrode 5, and the drain electrode. The pole 6 becomes one, which leads to the unfixed distance between the reference electrode 4 and the graphene film 2 in the actual biochemical detection, which affects the measurement results

Method used

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  • Silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor
  • Silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor
  • Silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor

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Embodiment Construction

[0027] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0028] The invention will be described in detail below with reference to the accompanying drawings and examples.

[0029] (1) On the upper surface of the bottom PET insulating film 9 and the top PET insulating film 12 fixed with the pad 13, prepare conductive silver paste printed wires 11 respectively;

[0030] (2) After preparing the conductive silver paste to print the wire 11, in the upper surface of the bottom PET insulating film 9, the area where the carboxylated graphene film 10 needs to be printed is carried out using the APTES reagent for amination treatment;

[0031] (3) In the region of amination treatment, the carboxylated graphene film 10 is printed;

[0032] (4) Printing the source electrode 5 and the drain electrode 6;

[0033] (5) the insulating protective layer 7 according to figure 2 and ...

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Abstract

The invention creates and provides a silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor. The graphene field effect transistor biochemical sensor is prepared by adopting a silk-screen printing technology, not only has the device advantages of a graphene field effect transistor, but also can meet the requirement for detection on three electrodes of a biochemical sensor in a liquid environment, and is simple in process and low in cost; moreover, the self-referencing structural design is different from an existing liquid gate graphene field effect transistor, adopts a design scheme of integrating a reference electrode and the graphene field effect transistor into one whole body, and has the advantages of all solid state and easiness for operation; and finally, due to adoption of a process of respectively carrying out carboxylation and amination processing on a graphene material and a substrate, the silk-screen printing type self-referencing-graphene field effect transistor biochemical sensor is beneficial for improving stability of a device.

Description

technical field [0001] The invention belongs to the field of biochemical sensors, and in particular relates to a device structure and process design. Background technique [0002] Field-effect transistors are the most widely used components in electronic products, and the generation and application of these devices are of epoch-making significance. Its appearance has triggered a huge revolution in the electronics industry. The application and development of this component in electronic products has made integrated circuits possible, and the miniaturization of electronic components has become a trend. The first generation of applicable field effect transistors is a metal-oxide-semiconductor field effect transistor based on single crystal silicon, which is called a metal-oxide-semiconductor field effect transistor (MOSFET for short). Bell Labs produced the first MOSFET in 1960. MOSFETs play a vital role in modern memory components and integrated circuit memory computer proce...

Claims

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Application Information

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IPC IPC(8): H01L29/772H01L29/78H01L29/16
CPCH01L29/16H01L29/772H01L29/78
Inventor 贾芸芳邵晨郭智勇盛博文琚成
Owner NANKAI UNIV
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