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A kind of mems device and its preparation method, electronic device

A MEMS pattern and device technology, applied in the manufacture of microstructure devices, microstructure devices, semiconductor/solid-state device parts, etc., can solve the problems of wafer fragility, easy breakage, fragmentation, etc., to reduce process costs, increase service life, The effect of improving the yield rate

Active Publication Date: 2017-11-14
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Deep etching is often used in the preparation process of MEMS devices. Some products are very thin, and some deep holes are etched on the thin wafer (wafer), which makes the Wafer very fragile and easy to break.
The problem of fragmentation will occur when doing the Wafer Mount process of such MEMS products

Method used

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  • A kind of mems device and its preparation method, electronic device
  • A kind of mems device and its preparation method, electronic device
  • A kind of mems device and its preparation method, electronic device

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preparation example Construction

[0039] Because deep etching is often used in the preparation process of MEMS devices, there are many deep grooves in the MEMS wafer, such as Figure 1a As shown in the figure on the right, some products are very thin, which makes the wafer very fragile and easy to break, such as Figure 1d The position indicated by the arrow. The problem of fragmentation will occur when doing the Wafer Mount process of such MEMS products.

[0040]Therefore, it is necessary to further improve the cutting method of the current MEMS wafer in order to eliminate the above-mentioned problems.

Embodiment 1

[0042] In order to solve the problems existing in the prior art, the present invention provides a kind of preparation method of MEMS device, below in conjunction with attached Figure 2a-2d The method is described further.

[0043] First, step 201 is performed to provide a MEMS wafer 201 on which MEMS patterns are formed.

[0044] Specifically, such as Figure 2a As shown, the MEMS wafer 201 can be made of semiconductor materials such as silicon, polysilicon or SiGe, and is not limited to a certain one.

[0045] The MEMS device formed in the present invention may be a sensor, such as a pressure sensor, an acceleration sensor, etc., or a MEMS microphone, or other types of MEMS devices, and is not limited to a certain one.

[0046] Wherein, the MEMS pattern includes deep holes and / or deep grooves, such as Figure 2a As shown in the figure on the right, the pattern is not limited to this example, and other patterns may be formed.

[0047] Then the MEMS wafer 201 forming the M...

Embodiment 2

[0067] In order to solve the problems existing in the prior art, the present invention provides a kind of preparation method of MEMS device, below in conjunction with attached Figures 3a-3d The method is described further.

[0068] First, step 301 is performed to provide a MEMS wafer 301 on which MEMS patterns are formed.

[0069] Specifically, such as Figure 3a As shown, the MEMS wafer 301 can be made of semiconductor materials such as silicon, polysilicon or SiGe, and is not limited to a certain one.

[0070] The MEMS device formed in the present invention may be a sensor, such as a pressure sensor, an acceleration sensor, etc., or a MEMS microphone, or other types of MEMS devices, and is not limited to a certain one.

[0071] Wherein, the MEMS pattern includes deep holes and / or deep grooves, such as Figure 3a As shown in the figure on the right, the pattern is not limited to this example, and other patterns may be formed.

[0072] Then the MEMS wafer 301 forming the ...

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PUM

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Abstract

The present invention relates to a MEMS device, its preparation method, and electronic device. The method includes: step S1: providing a MEMS wafer, and a MEMS pattern is formed on the front side of the MEMS wafer; step S2: forming a MEMS wafer on the MEMS wafer Form an adhesive tape on the front side of the MEMS wafer to cover the MEMS pattern; step S3: reverse the MEMS wafer, set a stressed protective layer on the back of the MEMS wafer, and apply pressure on the stressed protective layer , so as to attach the MEMS wafer to the adhesive tape. The present invention has the advantages of: 1. The probability of fragmentation is reduced and the service life of the machine is increased. 2. The yield rate is improved and the process cost is reduced. 3. Maintain the normal production of property insurance and increase the output.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS device, a preparation method thereof, and an electronic device. Background technique [0002] For the increasing demand for high-capacity semiconductor storage devices, the integration density of these semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been adopted in the prior art, such as by reducing the wafer size. And / or change the internal structure unit to form multiple memory units on a single wafer. For the method of increasing the integration density by changing the unit structure, attempts have been made to reduce the unit area. [0003] In the field of electronic consumption, multi-function devices are more and more popular among consumers. Compared with devices with simple functions, the production process of multi-functio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81C1/00
Inventor 郑超李卫刚刘炼王伟
Owner SEMICON MFG INT (SHANGHAI) CORP