Method for precisely determining position of self-organization quantum dot by optical method

A technology of self-organized quantum dots and optical methods, applied in measuring devices, material analysis through optical means, scientific instruments, etc., can solve the problems of uncontrollable growth position, shape observation and determination of quantum dots, etc., and achieve batch production Positioning of quantum dots, realizing automatic control and programmed data processing, the method is convenient and fast

Inactive Publication Date: 2016-05-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the most important problem with this material is that the growth of quantum dots is random, the growth position is uncontrollable, and the quantum dots are located under the cap layer, and the position of the quantum dots cannot be determined by observing the shape. An accurate and fast quantum dot The positioning method is very important for the application of this material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for precisely determining position of self-organization quantum dot by optical method
  • Method for precisely determining position of self-organization quantum dot by optical method
  • Method for precisely determining position of self-organization quantum dot by optical method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Self-organized quantum dots have photofluorescence signals, which can be characterized by a far-field confocal micro-area fluorescence system. Although the far-field optical method is convenient and fast, it is affected by the diffraction limit, and the smallest spot can only converge to the wavelength level, which is the micron level for visible light. The lateral size of quantum dots is generally below 100 nanometers, so the spot obtained by scanning and imaging with a confocal scanning microscope should be the convolution result of the quantum dot shape and the spot shape, which can be approximated as a Gaussian spot, which can be accurately simulated by a binary Gaussian function. Together, the fitting accuracy of the spot center can be much higher than the spot size, reaching the order of tens of nanometers. In the same principle, if there are nanostructures with large differences in reflectivity and substrates, their reflection signals should also be measured and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a method for precisely determining the position of a self-organization quantum dot by an optical method. A metal disk is taken as a sign, a confocal scanning microscope is used for measuring a reflection signal and a fluorescence signal used for marking a sample, image data is analyzed, system errors are carefully corrected, then, the spatial position of the quantum dot relative to a metal signal is obtained, and the positioning of a single quantum dot is realized. The method has universality and can be used for various types of positioning work of a single nanometer structure with fluorescent property. Positioning accuracy is obviously improved through detailed error analysis, and requirements on the positioning accuracy in the vast majority of work can be met. An automatic control system is used for finishing measurement, a computer program is used for finishing data processing, the positioning work of a large batch of quantum dots can be realized, and the method has extremely high engineering applicability.

Description

technical field [0001] The invention belongs to the field of material property characterization and industrial application, and specifically relates to a method for precisely positioning the position of semiconductor epitaxial self-organized quantum dots with random positions under the cover layer by an optical method. Background technique [0002] Semiconductor self-organized quantum dots are an important quantum material, and their fluorescence has quantum properties, which are expected to be applied in the fields of quantum communication and quantum information. However, the most important problem with this material is that the growth of quantum dots is random, the growth position is uncontrollable, and the quantum dots are located under the cap layer, and the position of the quantum dots cannot be determined by observing the shape. An accurate and fast quantum dot The positioning method is of great significance to the application of this material. Contents of the inven...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/64
CPCG01N21/6456
Inventor 张宏毅陈涌海
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap