A multiferroic heterogeneous magnetic field sensor with adjustable range and its range adjustment method
A magnetic field sensor and variable adjustment technology, applied in the field of magnetic field sensors, can solve problems such as inability to magnetic field sensors, and achieve the effects of ensuring accuracy, simple structure, and expanding the magnetic field measurement range.
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Embodiment 1
[0034] Such as figure 1 As shown, a multiferroic heterogeneous magnetic field sensor with adjustable range of the present invention includes a bottom metal electrode layer 1, a free layer 2, an isolation layer 3, a pinning layer 4 and a top metal electrode layer 5 arranged in sequence from bottom to top; The free layer 2 is a multiferroic heterogeneous multilayer structure, which is composed of a ferroelectric layer 21 and a first ferromagnetic layer 22 from bottom to top; the pinned layer 4 is a multilayer structure, and is composed of a second ferromagnetic layer 41 and a The antiferromagnetic layer 42 ; the direction of the ferroelectric stress axis of the free layer 2 is perpendicular to the direction of the magnetic moment of the pinned layer 4 on the horizontal projection. In this embodiment, the direction of the ferroelectric stress axis of the free layer 2 is the horizontal direction of the paper, and the direction of the magnetic moment of the pinned layer 4 is perpen...
Embodiment 2
[0065] Such as figure 2 As shown, a multiferroic heterogeneous magnetic field sensor with an adjustable range in this embodiment is basically the same as Embodiment 1, except that the ferroelectric layer 21 is a thin film structure of a ferroelectric material, or a thin film structure of a piezoelectric material, or A thin film structure of multiferroic material; there is also a support layer 6 under the bottom metal electrode layer 1, which is used to support the layers constituting the magnetic field sensor. The range adjustment method of the multiferroic heterogeneous magnetic field sensor in this embodiment is the same as that in Embodiment 1.
Embodiment 3
[0067] Such as image 3 As shown, a multiferroic heterogeneous magnetic field sensor with an adjustable range in this embodiment is basically the same as in Embodiment 2, except that the ferroelectric layer 21 is a thin film structure of a ferroelectric material, or a thin film structure of a piezoelectric material, or A thin film structure of multiferroic material; there is a support layer 6 on top of the top metal electrode layer 5, which is used to support the various layers constituting the magnetic field sensor. The range adjustment method of the multiferroic heterogeneous magnetic field sensor in this embodiment is the same as that in Embodiment 1.
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