Stripping method of chip epitaxial substrate

Abstract

The invention relates to a stripping method of a chip epitaxial substrate. Two sides of a chip are respectively provided with a conducting substrate and an epitaxial substrate, wherein the epitaxial substrate is a Si substrate. The method comprises the following steps: well protecting the conducting substrate of an LED chip first by utilizing a UV cutting adhesive tape, then adhering onto a strong acid-alkali resistant sheet by utilizing wax, and then performing corrosion in a corrosion solution. The stripping method of the chip epitaxial substrate has the advantages of low cost, high rate of finished products and capability of effectively protecting the chip and avoiding the warping and fracturing.

Description

technical field [0001] The invention relates to the field of chip preparation, in particular to a peeling method of a chip epitaxial substrate. Background technique [0002] LED has the advantages of environmental protection, energy saving, etc., and has broad prospects for development, and is known as the fourth generation of green lighting sources. High-power and high-brightness LEDs have great prospects for replacing incandescent lamps. Industrially, one of the ways to produce white light is to cover blue GaN-based LEDs with phosphors. [0003] The sapphire growth substrate is an industrialized substrate for growing GaN-based LEDs. However, its price is high and its diameter is small, so the production cost is high. There is a large lattice mismatch (16%) and thermal mismatch (25%) between it and GaN, resulting in poor quality of the grown GaN film; although the lattice mismatch between SiC and GaN is only 3.5%, the thermal conductivity It is relatively high, but its ...

AI Technical Summary

Problems solved by technology

Since the conductive substrate is also immersed in the solution during the corrosion process, the corrosion solution will also corrode the conductive substrate, making the product yield lower