Method for representing far infrared dried agaricus bisporus drying end point on basis of moisture distribution
A technology of far-infrared drying and Agaricus bisporus, which is applied in the analysis of materials, water resource assessment, and analysis by nuclear magnetic resonance. It can solve the problems of cumbersome steps derivation and calibration of work functions, and achieve raw materials saving, high accuracy, and intuitive determination. Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment
[0025] After cleaning and removing the stalk of Agaricus bisporus, cut it into thin slices of about 5mm along the growth direction, place it in the center of the radio frequency coil of the permanent magnetic field, and measure the transverse relaxation time T in the sample by using the CPMG pulse sequence 2 . The equipment parameters are set as follows: main frequency SF=23 (MHz), offset frequency Ol=425557.6Hz, hard pulse 90 degree pulse width P90=14(us), hard pulse 180 degree pulse width P180=30(us), spectrum width SW=200KHz, sampling points TD=828016, repeated scanning times NS=8, repeated sampling time TW=5000ms, echo number NECH=18000. Transverse relaxation time T using inversion software 2 value, such as figure 1 Shown, the transverse relaxation time of free water is 25 ~ 850ms. Then put the Agaricus bisporus slices into the far-infrared drying box for drying, the radiation distance is 150mm, and the radiation intensity is 2.1KW / m 2 . Scan the sample during the dry...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com