Nano-zinc oxide with planar hierarchical structure and preparation method thereof

A technology of nano-zinc oxide and hierarchical structure, applied in the field of nano-materials, can solve the problems of expensive equipment and inability to be realized by research groups, and achieve the effects of good uniformity, easy control of the preparation process and low production cost.

Inactive Publication Date: 2017-07-28
HEFEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of expensive equipment and the need for specialized technicians, this method of forming interconnected nanomaterials by means of nanomanipulation cannot be realized by ordinary research groups.

Method used

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  • Nano-zinc oxide with planar hierarchical structure and preparation method thereof
  • Nano-zinc oxide with planar hierarchical structure and preparation method thereof

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Comparison scheme
Effect test

Embodiment 1

[0023] The preparation method of a kind of planar hierarchical structure nano-zinc oxide that the present invention proposes comprises the following steps:

[0024] a. Grinding 0.2g of zinc oxide powder to obtain the first material;

[0025] b. Introduce nitrogen into the reaction vessel for 40 minutes at a rate of 10 L / min, then preheat the reaction vessel at 650°C and keep warm for 10 minutes;

[0026] c. Put the first material in the preheated reaction vessel, raise the temperature to 750°C at a heating rate of 10°C / min, keep it warm for 10 minutes, raise the temperature to 850°C at a heating rate of 10°C / min, keep it warm for 10 minutes, and keep it at 25 The heating rate of ℃ / min is raised to 950 ℃, and the temperature is kept for 30 minutes. Nitrogen gas is introduced at a rate of 3 L / min during the heating process and the holding process, and then cooled to room temperature at a cooling rate of 10 ℃ / min to obtain a planar hierarchical structure nano-zinc oxide , Nitrog...

Embodiment 2

[0030] The preparation method of a kind of planar hierarchical structure nano-zinc oxide that the present invention proposes comprises the following steps:

[0031] a. Grinding 0.1g of zinc oxide powder to obtain the first material;

[0032] b. Feed nitrogen into the reaction vessel for 30 minutes at a rate of 15 L / min, then preheat the reaction vessel at a temperature of 600° C. and keep it warm for 5 minutes;

[0033] c. Put the first material in the preheated reaction vessel, raise the temperature to 700°C at a heating rate of 5°C / min, keep it warm for 5min, raise the temperature to 800°C at a heating rate of 5°C / min, keep it warm for 5min, and keep it for 20 The heating rate of ℃ / min is raised to 900 ℃, and the temperature is kept for 20 minutes. Nitrogen gas is introduced at a rate of 4 L / min during the heating process and the holding process, and then cooled to room temperature at a cooling rate of 5 ℃ / min to obtain a planar hierarchical structure nano-zinc oxide , Nitr...

Embodiment 3

[0035] The preparation method of a kind of planar hierarchical structure nano-zinc oxide that the present invention proposes comprises the following steps:

[0036] a. Grinding the zinc oxide powder to obtain the first material;

[0037] b. Feed nitrogen into the reaction vessel for 35 minutes at a rate of 12 L / min, then preheat the reaction vessel at 630° C. and keep it warm for 8 minutes;

[0038] c. Put the first material in the preheated reaction vessel, raise the temperature to 650°C at a heating rate of 8°C / min, keep it warm for 8 minutes, raise the temperature to 750°C at a heating rate of 8°C / min, keep it warm for 8 minutes, and heat it for 30 minutes. The heating rate of ℃ / min is raised to 850 ℃, and the temperature is maintained for 15 minutes. Nitrogen gas is introduced at a rate of 2 L / min during the heating process and the heat preservation process, and then cooled to room temperature at a cooling rate of 8 ℃ / min to obtain a planar hierarchical structure nano-zinc...

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Abstract

The invention discloses a method for preparing nano-zinc oxide with a planar hierarchical structure, which comprises the following steps: grinding zinc oxide powder to obtain a first material; feeding nitrogen gas into a reaction container, and then preheating the reaction container and keeping it warm; The first material is placed in a preheated reaction vessel and continues to heat up, heat preservation, nitrogen gas is fed during the temperature rise process and heat preservation process, and then cooled to room temperature to obtain planar hierarchical structure nano-zinc oxide, and nitrogen gas is fed during the cooling process. The invention overcomes the deficiencies of the existing technology for preparing planar hierarchical nanostructures. The process is relatively simple, the reaction conditions are relatively mild, and the production cost is low. field applications.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a planar hierarchical structure nanometer zinc oxide and a preparation method thereof. Background technique [0002] In recent years, due to the importance of material morphology and structure in determining properties and applications, a lot of research has been done on inorganic micro-nano materials with various morphological structures prepared on the mesoscopic or even micron scale. [0003] Zinc oxide is a kind of II-VI semiconductor with wide bandgap and direct bandgap with wurtzite crystal structure, and the bandgap width at room temperature is 3.37ev. Due to its excellent semiconductor properties such as piezoelectric properties, photocatalytic properties, near-ultraviolet emission, and transparent piezoelectricity, as well as various morphological structures that have been prepared, it is widely used in transparent electrodes, short-wavelength optoelectronic ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02
CPCC01G9/02C01P2002/72C01P2004/03C01P2004/20
Inventor 万丽娟张忠祥范程华
Owner HEFEI NORMAL UNIV
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