Sputtering target and production method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- PLANSEE SHANGHAI HIGH PERFORMANCE MATERIAL
- Publication Date
- 2016-06-15
Smart Images
Figure 1
Abstract
Description
technical field
[0001] The invention relates to a sputtering target comprising molybdenum (Mo) and at least one metal of group 5 of the periodic table, wherein the average content CM of group 5 metal is 5 at% to 15 at% and the Mo content is ≥ 80 at% . Background technique
[0002] Sputtering, also known as cathode atomization, is the physical process by which atoms are separated from the sputtering target by bombardment with energetic ions and transformed into the gas phase. Sputtering targets composed of Mo and containing Group 5 metals are known. Thus, EP0285130A1 describes a sputtering target consisting of a Mo alloy and containing 50 to 85 at% tantalum (Ta). JP2002327264A discloses a sputtering composed of Mo alloy containing 2at% to 50at% niobium (Nb) and / or vanadium (V) with a relative density of >95%, a flexural strength of >300MPa and a grain size of <300μm target. The sputtering target has a diffuse phase and at least one pure phase or only a diffuse ph...