Sputtering target and production method

A sputtering target and deformation direction technology, applied in the field of sputtering targets, can solve the problems of high grain size, coarsening, and insufficient defect density

Active Publication Date: 2016-06-15
PLANSEE SHANGHAI HIGH PERFORMANCE MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] d) Partially resulting in sufficiently high diffusivity of interface and grain boundary volumes and ins

Method used

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  • Sputtering target and production method

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Experimental program
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Effect test

Embodiment Construction

[0066] For this, use the following powders:

[0067] - Mo powder with a Fisher particle size of 4.5 μm, an oxygen content of 0.24 at % and a carbon content of 0.03 at %

[0068] - Nb powder with a Fisher particle size of 8 μm, an oxygen content of 1.26 at % and a carbon content of 0.46 at %

[0069] To obtain a Σc / Σo value of 0.7 at a Mo amount of 758 kg and a Nb amount of 81.6 kg, 0.336 kg of carbon black powder with a Fisher particle size of 0.35 μm was mixed with Mo and Nb powders in a mechanical mixer. Four flat plates were fabricated from this powder mixture by cold isostatic pressing at a pressing pressure of 180 MPa. The plates were sintered at a temperature of 2150°C and the heating process was carried out under vacuum for three hours up to a temperature of 1200°C. h 2 It is then used as a process gas. The density of the sintered body is 8.9g / cm 3 (88.6% of theoretical density), the C content is 0.022 at% and the O content is 0.018 at%. The C / O ratio was 1.22.

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Abstract

The invention concerns a sputtering target composed of an Mo alloy containing at least one metal from group 5 of the periodic table, the mean content of group 5 metal being between 5 and 15 at% and the Mo content being >= 80 at%. The sputtering target has a mean C / O ratio in (at% / at%) of >= 1. The claimed sputtering targets can be produced by shaping and have improved sputtering behaviour.

Description

technical field [0001] The invention relates to a sputtering target comprising molybdenum (Mo) and at least one metal of group 5 of the periodic table, wherein the average content CM of group 5 metal is 5 at% to 15 at% and the Mo content is ≥ 80 at% . Background technique [0002] Sputtering, also known as cathode atomization, is the physical process by which atoms are separated from the sputtering target by bombardment with energetic ions and transformed into the gas phase. Sputtering targets composed of Mo and containing Group 5 metals are known. Thus, EP0285130A1 describes a sputtering target consisting of a Mo alloy and containing 50 to 85 at% tantalum (Ta). JP2002327264A discloses a sputtering composed of Mo alloy containing 2at% to 50at% niobium (Nb) and / or vanadium (V) with a relative density of >95%, a flexural strength of >300MPa and a grain size of <300μm target. The sputtering target has a diffuse phase and at least one pure phase or only a diffuse ph...

Claims

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Application Information

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IPC IPC(8): C23C14/34B22F1/00
CPCC22C1/04C22C27/02C22C27/04C23C14/3407B22F1/00C23C14/3414B22F3/16B22F3/17B22F3/18B22F3/20B22F2201/01B22F2201/10B22F2201/20B22F2301/20C23C14/14H01J37/342H01J37/3423H01J37/3429H01J37/3491
Inventor 尼古劳斯·赖因弗雷德迈克尔·朔贝尔沃尔弗拉姆·克纳布约尔格·温克勒
Owner PLANSEE SHANGHAI HIGH PERFORMANCE MATERIAL
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