Sputtering target and production method

Abstract

The invention concerns a sputtering target composed of an Mo alloy containing at least one metal from group 5 of the periodic table, the mean content of group 5 metal being between 5 and 15 at% and the Mo content being >= 80 at%. The sputtering target has a mean C / O ratio in (at% / at%) of >= 1. The claimed sputtering targets can be produced by shaping and have improved sputtering behaviour.

Description

technical field [0001] The invention relates to a sputtering target comprising molybdenum (Mo) and at least one metal of group 5 of the periodic table, wherein the average content CM of group 5 metal is 5 at% to 15 at% and the Mo content is ≥ 80 at% . Background technique [0002] Sputtering, also known as cathode atomization, is the physical process by which atoms are separated from the sputtering target by bombardment with energetic ions and transformed into the gas phase. Sputtering targets composed of Mo and containing Group 5 metals are known. Thus, EP0285130A1 describes a sputtering target consisting of a Mo alloy and containing 50 to 85 at% tantalum (Ta). JP2002327264A discloses a sputtering composed of Mo alloy containing 2at% to 50at% niobium (Nb) and / or vanadium (V) with a relative density of >95%, a flexural strength of >300MPa and a grain size of <300μm target. The sputtering target has a diffuse phase and at least one pure phase or only a diffuse ph...

AI Technical Summary

Problems solved by technology

[0011] d) Partially resulting in sufficiently high diffusivity of interface and grain boundary volumes and insufficient defect density;

[0012] e) the curing process results in an unacceptably high coarsening of the grains;

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