Preparation method of multi-chip parallel illumination module

Abstract

The invention discloses a preparation method of a multi-chip parallel illumination module. The method comprises following steps of (1), preparing N-electrode bonding pads; (2), preparing P-electrode bonding pads; (3), evaporating electrode metal, thus forming a whole module P electrode, chip unit P electrodes and N electrodes; (4), cutting to an N-type GaN layer; (5), testing photoelectric parameters; screening chip units with bad parameters; (6) filling up cutting slots; (7), removing the metal on the surfaces of the chip units; and preparing leads on the whole module P electrode and N electrode, thus obtaining the multi-chip parallel illumination module. According to the method provided by the invention, the packaging difficulty is greatly reduced; the evenness of the chips is consistent; the stability of the packaged chips is improved; the P electrode bonding pads and the N electrode bonding pads on the surfaces of the chip units are removed, therefore, the light shielding area resulting from the connection wires on the bonding pads is reduced; the light-emitting strength of the chips is improved; moreover, in the preparation process, the chip units are tested in advance; the chip particles with bad parameters are eliminated; and the method has actual applicability and operability.

Description

technical field [0001] The invention relates to a preparation method for connecting all chip units or partial chip units in a GaN blue epitaxial wafer in parallel to form a whole to form a multi-chip parallel lighting module, belonging to the technical field of LED chip preparation. Background technique [0002] As the core component of semiconductor lighting, LED chips are faced with increasingly severe market conditions, and higher requirements are put forward for the manufacturing methods of LED chips in terms of how to increase the optical power of chips, improve packaging efficiency, and reduce packaging costs. In traditional LED chips, the P electrodes and N electrodes are set on the surface of the chip, which has a serious light blocking effect. At the same time, most high-power LED chips (such as 5W, 10W, etc.) The pads of the chip are packaged in parallel in a bracket that itself has a circuit structure. This method has high requirements on packaging technology, an...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the outstanding light blocking phenomenon of electrode pads in the existing LED production process, the inability to pre-test the screening parameters of ordinary integrated parallel chips, and the low production efficiency, poor uniformity, and inconsistent height of a single LED chip in the packaging production process , the present invention provides a method for preparing a multi-chip parallel lighting module that is convenient for downstream customers to package. Screening parameters can be pre-tested on core particles

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