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Fin Field Effect Transistor and Method for Manufacturing Fin Field Effect Transistor

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as gate threshold voltage drop, signal-to-noise ratio drop, power consumption increase, etc., to improve integration and reduce the key Size, effect of improving roughness

Active Publication Date: 2019-06-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The short channel effect will deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio.

Method used

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  • Fin Field Effect Transistor and Method for Manufacturing Fin Field Effect Transistor
  • Fin Field Effect Transistor and Method for Manufacturing Fin Field Effect Transistor
  • Fin Field Effect Transistor and Method for Manufacturing Fin Field Effect Transistor

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Embodiment Construction

[0030] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0031] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0032] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The present invention provides a method of manufacturing a fin. The method comprises the steps of providing a semiconductor substrate, etching the semiconductor substrate to form a fin, and conducting at least one oxidation and removal process. The oxidation and removal process comprises the steps of conducting the oxidation treatment to form an oxide layer, and removing the oxide layer. According to the invention, the fin is formed through etching the substrate, and then the oxidation and removal process is conducted. In this way, the key size of the fin is reduced. Meanwhile, the line roughness of the fin is improved and the integration level of the fin field-effect transistor is increased.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a fin field effect transistor and a method for manufacturing the fin. Background technique [0002] With the high integration of semiconductor devices, the channel length of MOSFET continues to shorten, and a series of effects that can be ignored in the long channel model of MOSFET become more and more significant, and even become the dominant factor affecting the performance of the device. This phenomenon is collectively called short channel road effect. The short channel effect will deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio. [0003] In order to overcome the short-channel effect, a three-dimensional device structure of Fin Field Effect Transistor (Fin-FET) is proposed. Fin-FET is a transistor with a fin-shaped channel str...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/336
Inventor 李春龙闫江李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI