A shower head and plasma processing device thereof

Abstract

The invention provides a spray head used in a semiconductor plasma processing device. The semiconductor plasma processing device comprises a reaction cavity and a bearing table arranged inside the reaction cavity, and the bearing table is used for bearing a substrate; the spray head is arranged inside the reaction cavity, is opposite to the bearing table, is used for spraying reaction gas in the direction of the substrate and comprises spray head through holes for guiding the reaction gas into the reaction cavity, the spray head through holes comprise first through holes and second through holes, the first through holes have first flow resistance, the second through holes have second flow resistance, and the positions and the shapes of regions formed in the spray head by the first through holes are different from the positions and the shapes of regions formed in the spray head by the second through holes so that the deposition rate of the reaction gas on the substrate can be balanced. The spray head and the plasma processing device comprising the same effectively improve the uniformity of the deposition rate of the reaction gas on the substrate.

Description

technical field [0001] The invention relates to a semiconductor processing device, in particular to a shower head and a plasma processing device including the shower head. Background technique [0002] In existing plasma processing devices, the plasma processing is mostly performed on the substrate by the plasma formed in the reaction chamber. In the device, the shower head is usually used as the upper electrode plate, and the stage is used as the lower electrode. When performing plasma treatment, the shower head first sends the gas to the substrate on the stage in the form of a spray, and then the vacuum pump uniformly discharges the gas from around the stage, and then the pressure control device performs voltage stabilization treatment, and finally A voltage is applied between the upper pole plate of the shower head and the lower electrode of the stage to form plasma to process the substrate with plasma. [0003] In the above process, because the structure of the vent ho...

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Problems solved by technology

[0003] In the above process, because the structure of the vent hole of the shower head used is the same everywhere, the gas transportation direction is from the center of the stage to the periphery, which will easily cause the distribution of the gas in the center of the stage and the gas in the periphery. uneven, resulting in uneven plasma distribution, resulting in uneven deposition rates of reactive gases on the substrate

[0004] In order to avoid the uneven distribution of plasma, the prior art US6793733 discloses a gas distribution shower head, by setting a gas inlet panel and a gas outlet on the shower head, and the outlet part is a slender slit, the The length of the slit is at least half of the thickness of the panel to control the uniformity of the spray gas. Although the method reduces the spots and stripes on the substrate to a certain extent, the evenly distributed slits still can cause problems with non-uniform deposition rates of reactive gases on the substrate

[0005] At present, with the continuous development of semiconductor technology, the area of ​​the substrate required to be processed will continue to increase, and the problem of reduced film uniformity caused by the traditional shower head processing method will become more and more significant.

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