Thin film transistor as well as manufacturing method and corresponding device thereof

Abstract

The invention relates to a thin film transistor as well as a manufacturing method and a corresponding device thereof, and aims to solve the problem in the prior art that the manufacturing cost is relatively high as carbon nanotubes distributed in a certain diameter are adopted to form a random network on the active layer of a thin film transistor so as to form a film which is uniform in spatial distribution and a noble metal is needed as source and drain electrodes of the carbon nanotubes. The thin film transistor comprises a source electrode, a drain electrode and an active layer, wherein the active layer consists of carbon nanotubes of at least three different diameters; carbon nanotubes forming a trench area of the active layer have the smallest diameter; carbon nanotubes in contact with the source electrode and the drain electrode respectively have identical and the largest diameter; and carbon nanotubes of at least one different diameter are arranged between the carbon nanotubes of the smallest diameter and the carbon nanotubes of the largest diameter. The carbon nanotubes of three diameters have gradient valence bands, a formed energy-level buffer layer is beneficial to injection of holes from electrodes to trenches, and furthermore the source and drain electrodes can be made of ordinary metal, so that the manufacturing cost can be lowered.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a thin film transistor, a manufacturing method thereof and a corresponding device. Background technique [0002] At present, carbon nanotubes have been widely concerned and researched by academia and industry since their discovery. Due to their excellent electrical properties, good thermal conductivity and mechanical strength, carbon nanotubes are widely used in display, sensor, RF circuit, flexible circuit and other fields, and have shown great application potential. [0003] In the prior art, when carbon nanotubes are applied to thin film transistors, carbon nanotubes are mainly used as the active layer material, and the diameter range of carbon nanotubes is generally between 1.2nm and 1.6nm, that is, the active layer adopts a certain diameter distribution. The carbon nanotubes form a random network to form a spatially uniform film. Since there is an inverse relationship bet...

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Problems solved by technology

[0005] The present invention provides a kind of thin film transistor, its manufacturing method and corresponding device, in order to solve the thin film transistor in the prior art, its active layer adopts the carbon nanotube of certain diameter distribution to form random network to form the thin film of uniform space distribution, needs Using noble metals as the source and drain of carbon nanotubes, the problem of high production costs

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