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Anode Structure of Organic Light Emitting Diodes

A light-emitting diode and anode structure technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of simple metal migration, lower anode structure yield, organic light-emitting diode black spots, etc.

Active Publication Date: 2019-01-11
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the elemental metal in the metal reflective layer is prone to the migration of the elemental metal, resulting in voids on the anode structure, resulting in black spots in the organic light-emitting diode; Stress relief, resulting in hillocks on the metal reflective layer
Black spots and bumps are generated on the anode structure, reducing the yield of the anode structure

Method used

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  • Anode Structure of Organic Light Emitting Diodes
  • Anode Structure of Organic Light Emitting Diodes
  • Anode Structure of Organic Light Emitting Diodes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Please refer tofigure 1 The anode structure 100 includes a first oxide semiconductor layer 110 , a first reflective layer 120 , a second reflective layer 130 , and a second oxide semiconductor layer 190 arranged in sequence. Both the first oxide semiconductor layer 110 and the second oxide semiconductor layer 190 are ITO layers. The first reflective layer 120 is an Ag alloy layer, and the second reflective layer 130 is an Ag alloy layer. The thickness of the first reflective layer 120 is 10nm, wherein the content ratios of Pd, Cu, Au, Nd and Ge are respectively 0.01%, 0.01%, 0.01%, 0.01%, 0.01%; the thickness of the second reflective layer 130 is 120nm, Among them, the content ratios of Pd, Cu, Au, Nd and Ge are 3.00%, 3.00%, 3.00%, 3.00% and 2.00%, respectively.

Embodiment 2

[0040] Please refer to figure 2 The anode structure 200 includes a first oxide semiconductor layer 210 , a first reflective layer 220 , a second reflective layer 230 , a third reflective layer 240 and a second oxide semiconductor layer 290 arranged in sequence. Both the first oxide semiconductor layer 210 and the second oxide semiconductor layer 290 are ITO layers. The first reflective layer 220 , the second reflective layer 230 and the third reflective layer 240 are all Ag alloy layers. The thicknesses of the first reflective layer 220 and the third reflective layer 240 are both 10nm, and the contents of Pd, Cu, Au, Nd and Ge in both are respectively 0.01%, 0.01%, 0.01%, 0.01%, 0.01%; The thickness of the second reflective layer 230 is 130 nm, and the content ratios of Pd, Cu, Au, Nd and Ge in the second reflective layer 230 are 3.00%, 3.00%, 3.00%, 3.00% and 2.00%, respectively.

Embodiment 3

[0042] Please refer to image 3 , the anode structure 300 includes a first oxide semiconductor layer 310, a first reflective layer 320, a fourth reflective layer 350, a second reflective layer 330, a fifth reflective layer 360, a third reflective layer 340, and a second oxide semiconductor layer arranged in sequence semiconductor layer 390 . Both the first oxide semiconductor layer 310 and the second oxide semiconductor layer 390 are ITO layers. The first reflective layer 320 , the second reflective layer 330 , the third reflective layer 340 , the fourth reflective layer 350 and the fifth reflective layer 360 are all Ag alloy layers. The thicknesses of the first reflective layer 320, the third reflective layer 340, the fourth reflective layer 350, and the fifth reflective layer 360 are all 10nm, and the thickness of the second reflective layer 330 is 60nm; the Pd, Cu, The content ratios of Au, Nd and Ge are 3.00%, 3.00%, 3.00%, 3.00%, 2.00%, respectively, and the total conte...

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Abstract

The invention discloses an anode structure of an organic light emitting diode. The anode structure comprises a first oxide semi-conductor layer, multiple reflection layers and a second oxide semi-conductor layer which are sequentially arranged, wherein the multiple reflection layers respectively comprise metal impurities, and total content ratios of the metal impurities of the multiple reflection layers are different. According to the anode structure, the multiple reflection layers which have metal impurities at the different total content ratios are arranged between the first oxide semi-conductor layer and the second oxide semi-conductor layer, so not only can the anode structure be guaranteed to have excellent reflectivity, but also transfer, oxidation or sulfuration of pure metal can be prevented, so the anode of the organic light emitting diode is prevented from generating black points, and the possibility of generating bulges can be further reduced.

Description

technical field [0001] The invention relates to the field of organic light emitting diodes, in particular to an anode structure of a top-emitting organic light emitting diode. Background technique [0002] Organic Light Emitting Diode (OLED) has become the most promising new-generation light-emitting technology because of its advantages of all solid state, active light emission, high brightness, low power consumption, high luminous efficiency, wide operating temperature, and flexibility. [0003] According to the different directions of light emission from the device, organic light-emitting diodes in the prior art are mainly divided into two different structures: one is bottom-emitting organic light-emitting diodes, the light is emitted from the anode, and enters the air after passing through the driving circuit and the substrate ; The other is a top-emitting organic light-emitting diode, and the light is emitted from the cathode. With the development of display technology,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/54
Inventor 彭兆基
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD