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Microlens-integrated high-beam quality semiconductor laser array

A high-beam and micro-lens technology, applied to semiconductor lasers, semiconductor laser devices, lasers, etc., can solve problems such as poor beam quality, increase the divergence angle of the slow axis, and limit output power, so as to reduce processing and assembly costs and improve The effect of stability, high beam quality

Inactive Publication Date: 2016-07-27
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

And its slow axis divergence angle, its full angle is usually 12°~20°, the light field in this direction is a multimode Hermitian-Gaussian distribution, and the beam quality is poor
Although the ridge waveguide laser can achieve single-sided mode operation, the small output aperture limits its output power, generally below 1W; and due to the introduction of the ridge waveguide, the slow axis divergence angle increases, which limits its application

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Embodiment Construction

[0011] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0012] Such as figure 1 As shown, each microlens integrated self-collimating semiconductor laser array is composed of 6 laser units and 6 front-end lens units 2 . Wherein, each laser unit is a ridge waveguide 1 structure, and a high-power single-mode laser output is obtained through the ridge waveguide structure 1 . Each front lens unit 2 has a semi-cylindrical structure, and by compressing the slow-axis divergence angle parallel to the junction plane, a slow-axis self-collimated laser beam transmitted along the X direction is obtained. The distance between the right end face of each microlens integrated self-collimating semiconductor laser and the front lens unit 2 is d s , d s =f*(n-1)-D-f 1 , where f is the focal length of the front lens unit 2, n is the effective refractive index of the epitaxial wafer semiconductor material, D is the ...

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Abstract

The invention provides a microlens-integrated high-beam quality semiconductor laser array, and relates to the field of semiconductor lasers and microlens-integrated semiconductor laser arrays. According to the array, high-power and low-slow axis divergence angle self-collimated high-beam quality maser output is achieved; and the defect of a large slow axis divergence angle of a ridge-type semiconductor laser is greatly improved through an integrated semi-cylindrical lens unit. The laser array comprises at least two ridge waveguides and front-end lens units, which are manufactured on an epitaxial wafer, wherein the at least two ridge waveguides are the same and parallel to each other; each front-end lens unit is paired with one ridge waveguide and is located on the side surface of the ridge waveguide; at least two low-slow axis self-collimating lasers are formed; the array is formed according to constant periodic arrangement; and a distance exists between each ridge waveguide and the front-end lens unit. According to the microlens-integrated high-beam quality semiconductor laser array, the stability of the semiconductor laser array and the compactness of a complicated system can be obviously improved; meanwhile, the processing cost and the adjusting cost of a traditional optical and mechanical system are greatly reduced; and high-power, high-beam quality and single-mode laser output is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers and microlens integrated semiconductor laser arrays, in particular to a microlens integrated semiconductor laser array with high beam quality. Background technique [0002] Semiconductor lasers have many advantages such as small size, high efficiency, long life, and easy integration. Compared with ordinary laser arrays, microlens integrated laser arrays have higher beam quality and smaller slow-axis divergence angles, and are more suitable for large-scale semiconductor laser beam shaping and combining. It has wider application prospects in industry, military, medical and other aspects. Manufacture of semiconductor lasers with high power and high beam quality has always been the goal pursued by people. [0003] Due to the large size of the waveguide, the traditional high-power wide-strip semiconductor laser cannot effectively confine the lateral mode of the light wave in the resonator. The hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40
CPCH01S5/4025H01S5/4012
Inventor 贾鹏秦莉宁永强王立军
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI