Full-simulation power-amplification driving circuit

Abstract

The invention provides a full-simulation power-amplification driving circuit.The full-simulation power-amplification driving circuit comprises an input stage unit, an excitation stage unit and an output stage unit, wherein the input stage unit, the excitation stage unit and the output stage unit are sequentially connected.Current signals are input from the input stage unit, pass through the excitation stage unit and are output through the output stage unit; the input stage unit buffers the current signals in the circuit, improves the stability of the circuit and reduces noise; the excitation stage unit provides excitation currents and static bias voltage for an output stage; the output stage unit amplifies the electric currents, provides the excitation currents for the gate of an IGBT and guarantees the opening response speed and the electromagnetic compatibility characteristic of the IGBT.By means of the full-simulation power-amplification driving circuit, the function of high-speed and high-power operational amplifier is effectively achieved; the circuit is formed in the mode that simplest full-simulation electronic components are skillfully lapped, the use ration of the power supply voltage of the device is greatly increased, and meanwhile the electromagnetic disturbance EMC problem of the IGBT in the high-frequency PWM environment can be solved; cost is low, and supporting of software is avoided; production of a thick film circuit or a special chip is convenient.

Description

technical field [0001] The invention relates to the field of power amplifying and driving of smart grids, in particular to an all-analog power amplifying and driving circuit. Background technique [0002] The IGBT is a gate control device, and the IGBT series voltage balance can be realized by controlling the gate. The active voltage control (ActiveVoltageControl) proposed by Dr. Patrick Palmer of the University of Cambridge in the United Kingdom introduces multiple closed-loop feedbacks to make the collector-emitter voltage VCE follow the set reference voltage during the IGBT switching process to achieve voltage balance in the direct series connection of IGBTs. Such as figure 1 As shown, the active voltage control consists of three closed loops. The outermost ring compares the reference voltage setting with the IGBT collector-emitter voltage to generate an error signal to control the IGBT. When the IGBT terminal voltage is higher than a given voltage, a positive gate vol...

AI Technical Summary

Problems solved by technology

The turn-on process is similar to the turn-off process. When the IGBT is turned on, the dv / dt is determined by the IGBT stray parameters and the gate voltage. This stage is mainly to continuously adjust the gate voltage signal to make up for the difference in IGBT’s own characteristics, so that the dv / dt follows the reference waveform However, due to the characteristics of the IGBT itself, the reference waveform When it is too large, the IGBT will not be able to quickly follow the reference waveform

Images