Unlock instant, AI-driven research and patent intelligence for your innovation.

Electron beam evaporation source and vacuum evaporation device

A technology of electron beam evaporation and electron beam, which is applied in the field of electron beam evaporation source and vacuum evaporation device with the electron beam evaporation source, which can solve the problems of unable to reflect electron capture and not consider the influence of magnetic field

Active Publication Date: 2018-12-21
ULVAC INC
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the reflected electron trap described in Cited Document 1 cannot capture the reflected electrons detached from the opening.
In addition, the influence of the magnetic field formed around the reflected electron trap when there is a magnetic material in the evaporation material contained in the evaporation source is not considered.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electron beam evaporation source and vacuum evaporation device
  • Electron beam evaporation source and vacuum evaporation device
  • Electron beam evaporation source and vacuum evaporation device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ＞

[0046] (Structure of Vacuum Evaporation Device)

[0047] figure 1 It is a schematic diagram showing the vacuum vapor deposition apparatus according to the first embodiment of the present invention. In addition, the X-axis direction, the Y-axis direction, and the Z-axis direction in the figure are vertical three-axis directions, wherein the X-axis direction is the first axis direction, which corresponds to the front-back direction of the electron beam evaporation source 100, and the Y-axis direction is The third axis direction corresponds to the left-right direction of the electron beam evaporation source 100 , and the Z-axis direction corresponds to the second axis direction and corresponds to the vertical direction (up-down direction).

[0048] as it should figure 1 As shown in , the vacuum evaporation apparatus 1 has a vacuum chamber 11 , a support mechanism 12 and an electron beam evaporation source 100 .

[0049]The vacuum chamber 11 is connected to a vacuum pump (not s...

experiment example 1-1

[0092] The electron beam evaporation sources 100 and 300 are arranged in the chamber 11, the electron gun 120 is driven, and a plurality of temperature sensors are installed on substrates arranged at predetermined positions in the chamber 11 to check the temperature rise of each substrate. In addition, a glass substrate was used as the substrate.

[0093] Figure 9 It is a schematic diagram showing the positions where substrates and temperature sensors are arranged in the chamber 11 . The temperature sensor T1 is arranged on the ceiling 11 a of the chamber 11 . The distance between the temperature sensor T1 and the first holding area 111 is about 650 mm. The temperature sensor T2 is disposed substantially in the center of one support portion 13 . The distance between the temperature sensor T2 and the first holding area 111 is about 600 mm, and the angle θ2 between the straight line connecting the temperature sensor T2 and the first holding area 111 and the X-axis direction ...

experiment example 1-2

[0102] Next, in Experimental Example 1-2, detecting electrodes having different angles with the XY plane were provided on the cover plate, and the value of the current flowing through each detecting electrode was detected. The detection electrodes are set such that the angles formed with the XY plane are 20°, 30°, 40°, 50°, 60°, 70°, 80° and 90° respectively, and are respectively connected to the ground potential.

[0103] In Experimental Example 1-2, the electron beam evaporation sources of Example 1 and Comparative Examples 1 and 2 were arranged in the chamber 11 to perform evaporation.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

Provided are: an electron beam evaporation source wherein reflected electrons scattering in a wide range can be stably captured; and a vacuum deposition device provided with the electron beam evaporation source. This electron beam evaporation source is provided with an evaporation material holding section, an electron gun, and a magnetic circuit section. The evaporation material holding section has a first holding region capable of holding a first evaporation material. The electron gun is disposed by being aligned with the first holding region in the first axis direction, and is configured such that the electron gun can output an electron beam to the first holding region. The magnetic circuit section has a magnetic plate configured from a soft magnetic material, and a reflected electron polarization member capable of polarizing reflected electrons toward the magnetic plate, said reflected electrons having been formed when the electron beam is reflected by the first evaporation material, and the magnetic circuit section is disposed by being aligned with the electron gun in the first axis direction with the first holding region therebetween.

Description

technical field [0001] The invention relates to an electron beam evaporation source and a vacuum evaporation device with the electron beam evaporation source. Background technique [0002] The vacuum evaporation method is an effective method for forming a thin film, and is used in a wide range of fields. As a heating source for evaporating a material for forming a thin film (referred to as an evaporation material or a deposition material), electron beams, resistance heating, induction heating, ion beams, and the like are used. The use of electron beam heating is suitable for many materials such as high melting point metals and oxides, and when using electron beam heating, the pollution caused by evaporation materials and crucibles is less. For the reasons described above, the electron beam heating method is also used when a plurality of evaporating materials are housed as one evaporating source and a laminated film is formed from these evaporating materials. [0003] On th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/30H01J37/06
CPCC23C14/30H01J37/06
Inventor 后田以诚矢岛太郎矶野坚一
Owner ULVAC INC