Unlock instant, AI-driven research and patent intelligence for your innovation.

Novel method for recycling polyethylene glycol and silicon carbide in silicon wafer cutting waste mortar

A technology of silicon wafer cutting and polyethylene glycol, applied in the direction of lubricating compositions, etc., can solve the problems of no one reporting, and achieve the effects of light pollution, reduced emissions, and improved quality of use

Inactive Publication Date: 2016-08-24
JIANGNAN UNIV
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The law is currently unreported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] After mixing the silicon chip cutting waste mortar with water, use a microwave reactor at 60°C to react for 1 hour, and then perform the first-stage solid-liquid separation to obtain the first-stage suspension and the first-stage solid particles; The first-level solid particles are diluted with water and then subjected to second-level solid-liquid separation to obtain a second-level suspension and second-level solid particles; the second-level suspension is used to mix the silicon wafer cutting waste mortar, and the The second-stage solid particles are subjected to third-stage centrifugation after the first-stage water washing to obtain a third-stage centrifugal liquid and third-stage centrifugal solid particles; the third-stage centrifugal liquid is reused in the first-stage Washing with water, drying and screening the third-stage centrifugal solid particles to obtain silicon carbide; filtering, decolorizing and resin-exchanging the first-stage suspension, followed by v...

Embodiment 2

[0014] After mixing the silicon chip cutting waste mortar with water, use a microwave reactor at 25°C to react for 2 hours, and then perform the first-stage solid-liquid separation to obtain the first-stage suspension and the first-stage solid particles; The first-level solid particles are diluted with water and then subjected to second-level solid-liquid separation to obtain a second-level suspension and second-level solid particles; the second-level suspension is used to mix the silicon wafer cutting waste mortar, and the The second-stage solid particles are subjected to third-stage centrifugation after the first-stage water washing to obtain a third-stage centrifugal liquid and third-stage centrifugal solid particles; the third-stage centrifugal liquid is reused in the first-stage Washing with water, drying and screening the third-stage centrifugal solid particles to obtain silicon carbide; filtering, decolorizing and resin-exchanging the first-stage suspension, followed by ...

Embodiment 3

[0016] After mixing the silicon wafer cutting waste mortar with water, react in a microwave reactor at 80°C for 30 minutes, and then perform the first-stage solid-liquid separation to obtain the first-stage suspension and the first-stage solid particles; The first-level solid particles are diluted with water and then subjected to second-level solid-liquid separation to obtain a second-level suspension and second-level solid particles; the second-level suspension is used to mix the silicon wafer cutting waste mortar, and the The second-stage solid particles are subjected to third-stage centrifugation after the first-stage water washing to obtain a third-stage centrifugal liquid and third-stage centrifugal solid particles; the third-stage centrifugal liquid is reused in the first-stage Washing with water, drying and screening the third-stage centrifugal solid particles to obtain silicon carbide; filtering, decolorizing and resin-exchanging the first-stage suspension, followed by ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a novel method for recycling polyethylene glycol and silicon carbide in silicon wafer cutting waste mortar. The method is characterized in that microwave and centrifugation are combined, reagents such as acid-base likely to cause environmental pollution are prevented from being used, and polyethylene glycol and silicon carbide in silicon wafer cutting waste mortar are recycled. By means of the recycling method, the pollution degree of sewage is remarkably lowered, and environmental pollution is promoted.

Description

Technical field: [0001] The invention relates to a new method for recovering polyethylene glycol and silicon carbide in silicon wafer cutting waste mortar, which adopts the combined use of microwave and centrifugation, and avoids the use of acid or alkali. It belongs to the technical field of resource comprehensive utilization. Background technique: [0002] The cutting or grinding of silicon wafers in the solar energy and electronics industries adopts the principle of multi-wire cutting. Most of the silicon cutting fluids on the market are polyethylene glycol type, and the main components of the waste slurry are polyethylene glycol, silicon carbide and silicon powder. If the silicon wafer cutting waste mortar is directly discarded, it will not only pollute the environment, but also cause waste of components such as silicon carbide and polyethylene glycol cutting fluid, and increase production costs. Therefore, the silicon carbide and polyethylene glycol in the silicon wafe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C10M175/00C01B31/36C08G65/00
Inventor 王大伟余信吕东芸郑钰丁玉强
Owner JIANGNAN UNIV