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Manufacturing method of mim capacitor and mim capacitor

A manufacturing method and technology of capacitors, which are applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor dielectric properties, and achieve the effect of improving the yield rate

Active Publication Date: 2018-09-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of this application is to provide a method for manufacturing a MIM capacitor and a MIM capacitor, so as to solve the problem that defects are easily caused when making MIM capacitors in the prior art, thereby easily leading to the problem of poor dielectric properties

Method used

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  • Manufacturing method of mim capacitor and mim capacitor
  • Manufacturing method of mim capacitor and mim capacitor
  • Manufacturing method of mim capacitor and mim capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Forming a lower pole metal layer on the substrate, forming a dielectric layer on the lower pole metal layer, forming a metal layer on the dielectric layer by physical vapor deposition, and forming an anti-reflection layer preparation layer on the metal layer; wherein, the lower pole metal layer and The material of the metal layer is metal aluminum, the material of the medium layer is silicon nitride, and the material of the anti-reflection layer preparation layer is silicon oxynitride;

[0043] A preliminary mask layer is formed on the preliminary layer of the anti-reflection layer, and the preliminary mask layer is patterned to form the mask layer. Wherein, along each direction parallel to the upper surface of the metal layer, the distance between the outer edge of the mask layer and the outer edge of the metal layer is 1 / 5 of the diameter of the lower metal layer; dry etching the anti-reflection layer along the mask layer Preliminary layer and metal layer, forming ant...

Embodiment 2

[0046] Forming a lower pole metal layer on the substrate, forming a dielectric layer on the lower pole metal layer, forming a metal layer on the dielectric layer by physical vapor deposition, and forming an anti-reflection layer preparation layer on the metal layer; wherein, the lower pole metal layer and The material of the metal layer is metal aluminum, the material of the medium layer is silicon nitride, and the material of the anti-reflection layer preparation layer is silicon oxynitride;

[0047] A preliminary mask layer is formed on the preliminary layer of the anti-reflection layer, and the preliminary mask layer is patterned to form the mask layer. Wherein, along each direction parallel to the upper surface of the metal layer, the distance between the outer edge of the mask layer and the outer edge of the metal layer is 1 / 5 of the diameter of the lower metal layer; dry etching the anti-reflection layer along the mask layer Preliminary layer and metal layer, forming ant...

Embodiment 3

[0050] Form the lower pole metal layer on the substrate, form the dielectric layer on the lower pole metal layer, and adopt the physical vapor deposition method to form the metal layer on the dielectric layer; wherein, the material of the lower pole metal layer and the metal layer is metal aluminum, and the material of the dielectric layer The material is silicon nitride;

[0051] A preliminary mask layer is formed on the metal layer, and the preliminary mask layer is patterned to form the mask layer. Wherein, along each direction parallel to the upper surface of the metal layer, the distance between the outer edge of the mask layer and the outer edge of the metal layer is 1 / 5 of the diameter of the lower metal layer; dry etching the metal layer along the mask layer, forming a preliminary upper metal layer;

[0052] Further, wet etching the preliminary upper pole metal layer along the second mask layer to form the upper pole metal layer; wherein, along each direction parallel...

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Abstract

The present application discloses a preparation method of an MIM capacitor and the MIM capacitor. The method comprises a step of forming a lower electrode metal layer on a substrate, a step of forming a dielectric layer on the lower electrode metal layer, and a step of forming an upper metal layer on the dielectric layer, wherein, the step of forming the upper electrode metal layer comprises a step of forming a metal layer on the dielectric layer, a step of forming a mask layer on the metal layer and etching the metal layer for the first time along the mask layer to form a preparation upper electrode metal layer, and a step of etching the preparation upper electrode metal layer for a second time along the mask layer to form the upper electrode metal layer, wherein, the first time of etching is dry method etching, and the second time of etching is wet method etching. In the preparation method, after the step of carrying out dry method etching on the metal layer on the dielectric layer to form the preparation upper electrode metal layer, the wet method etching on the preparation upper electrode metal layer is carried out further to form the upper electrode metal layer. In the process, the defect at the contact part of the dielectric layer and the upper electrode metal layer is eliminated, and the yield of the MIM capacitor is improved.

Description

technical field [0001] The present application relates to the field of manufacturing MIM capacitors, in particular, to a method for manufacturing MIM capacitors and MIM capacitors. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs and monolithic microwave ICs. Common capacitive elements include metal-oxide-semiconductor (MOS) capacitors, PN junction capacitors, and MIM (metal-insulator-metal, MIM for short) capacitors. Among them, MIM capacitors can provide better electrical characteristics than MOS capacitors or PN junction capacitors in some special applications. This is because MOS capacitors and PN junction capacitors are limited by their own structures, and the electrodes are prone to generate hole layers during operation. , causing its frequency characteristics to degrade. MIM capacitors can provide better frequency and temperature-dependent characteristics. [0003] Su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L23/522H01L21/02
Inventor 刘良柳会雄乔仁明许谢慧娜
Owner SEMICON MFG INT (SHANGHAI) CORP