N-type dynamic threshold transistor, production method, and method of improving working voltage
A dynamic threshold, transistor technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems that transistors cannot share power supply voltage, limit application fields, low operating voltage, etc., to reduce threshold voltage and expand application value. , Improve the effect of driving current
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0060] Such as Figure 1 ~ Figure 2 As shown, the present invention provides an N-type dynamic threshold transistor 1, the N-type dynamic threshold transistor 1 at least includes: a substrate structure 11, n threshold adjustable structures located on the substrate structure 11, wherein, n is a natural number greater than or equal to 1. The N-type dynamic threshold transistor 1 of this embodiment only includes one threshold adjustable structure, and the following only introduces the N-type dynamic threshold transistor with one threshold adjustable structure.
[0061] Such as figure 2 As shown, the substrate structure 11 is located at the bottom layer and serves as a substrate for preparing semiconductor devices. Specifically, such as figure 2 As shown, in this embodiment, the substrate structure 11 at least includes a semiconductor base 111 and an oxide layer 112 on the semiconductor base 111 . The semiconductor substrate 111 includes but not limited to silicon, silicon d...
Embodiment 2
[0065] Such as image 3 As shown, in this embodiment, an N-type dynamic threshold transistor with a multi-finger structure is provided to meet the gain and power requirements of the radio frequency transistor.
[0066] Specifically, the N-type dynamic threshold transistor with a multi-finger structure includes n adjustable threshold structures, where n is a natural number greater than or equal to 1. In this embodiment, the value of n is 2. In actual design, the specific value of n is determined according to the requirements of gain and power, and is not limited to this embodiment. The structures and connections of the two NMOS transistors and the two diodes included in each threshold adjustable structure are consistent with those in Embodiment 1, and will not be repeated here.
Embodiment 3
[0068] Such as figure 1 with figure 2 As shown, the present invention also provides a preparation method of an N-type dynamic threshold transistor, and the preparation method of the N-type dynamic threshold transistor at least includes:
[0069] A substrate structure 11 is provided, and n threshold adjustable structures are formed on the substrate structure 11 as required, wherein n is a natural number greater than or equal to 1. As for the value of n, in actual design, it is determined by the requirements of gain and power.
[0070] The preparation method of the threshold adjustable structure at least includes:
[0071] First, a P-type intrinsic region is prepared on the substrate structure 11 . Specifically, such as figure 2 As shown, in this embodiment, the substrate structure 11 includes a semiconductor base 111 and an oxide layer 112 on the semiconductor base 111 . The substrate structure 11 may also include other semiconductor layers to improve device performance,...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More