A charge pump control circuit

Abstract

The embodiment of the present invention discloses a charge pump control circuit. The circuit includes: a charge pump unit, a voltage detection unit and a charge pump control unit. The input end of the voltage detection unit is connected to the output end of the charge pump unit for detecting the Whether the output terminal voltage of the charge pump unit reaches the target voltage value, if so, output the first sign signal to the charge pump control unit, otherwise output the second sign signal to the charge pump control unit; the input terminal of the charge pump control unit and the voltage detection The output terminal of the unit is connected, and under the control of the first flag signal, an enable signal is generated to make the set charge pump circuit work, so as to control the set charge pump circuit to work to maintain the target voltage value, or under the control of the second flag signal An enable signal is generated to make all the charge pump circuits work, so as to control the work of all the charge pump circuits to jointly generate the target voltage, so as to achieve the purpose of reducing the output voltage fluctuation.

Description

technical field [0001] Embodiments of the present invention relate to circuit technology, and in particular to a charge pump control circuit. Background technique [0002] Non-volatile flash memory (nor Flash / nand Flash) is a very common memory chip, which has the advantages of random access memory (RAM) and read-only memory (Read-Only Memory, ROM). It will be lost, which is a memory that can be electrically erased and written in the system. At the same time, its high integration and low cost make it the mainstream of the market. [0003] The Flash chip is composed of tens of thousands of internal memory cells, each of which stores one bit of data, and the data storage operation is completed by applying a corresponding voltage on the word line of the memory cell, which is usually composed of a charge The output voltage of the charge pump circuit usually has a certain voltage fluctuation, and the voltage fluctuation will affect the storage of data. Moreover, with the shrinki...

AI Technical Summary

Problems solved by technology

[0003] The Flash chip is composed of tens of thousands of internal memory cells, each of which stores a bit of data, and the data storage operation is completed by applying a corresponding voltage on the word line of the memory cell, which is usually composed of a charge The output voltage of the charge pump circuit usually has a certain voltage fluctuation, which will affect the storage of data. Moreover, with the shrinking of the flash chip process feature size, the capacitive load of the output voltage will also change. Large, in order to meet the readout time requirements of the Flash chip, many charge pump circuits need to work in parallel, which leads to greater fluctuations in the output voltage of the charge pump circuit and is difficult to control. At the same time, the noise of the input power supply will also increase, affecting the storage performance of the Flash chip

A structural schematic diagram of a charge pump circuit in the prior art can be found in figure 1 As shown, this circuit structure has a certain inhibitory effect on the fluctuation of the output voltage, but the effect is not ideal.

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