Unlock instant, AI-driven research and patent intelligence for your innovation.

High Linearity Push-Pull Common-Gate Amplifier

An amplifier and transistor technology, applied in amplifiers, radio frequency amplifiers, power amplifiers, etc., can solve problems such as large power consumption

Active Publication Date: 2019-03-15
APPLE INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As more input receiver ports are integrated, the power consumption becomes larger

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High Linearity Push-Pull Common-Gate Amplifier
  • High Linearity Push-Pull Common-Gate Amplifier
  • High Linearity Push-Pull Common-Gate Amplifier

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0065] Example 1 is an amplifier comprising: an input configured to receive an input signal; an output configured to drive an output signal; a first transistor comprising a first input contact coupled to the input and coupled to the a first output contact of the output terminal; a second transistor comprising a second input contact coupled to the input terminal and a first output contact coupled to the first transistor and a second output contact of the output terminal a current bias component coupled to the first input contact of the first transistor and configured to provide a bias current to the first transistor and the second transistor along the same path; a capacitor component coupled to connected between the input contact of the first transistor and the second input contact of the second transistor, and configured to short-circuit between the first input contact and the second input contact , the input signal within an operating frequency range and providing the input s...

example 2

[0066] Example 2 includes the subject matter of Example 1, further comprising: a capacitor assembly coupled to the input and configured to provide a DC path for the bias current.

example 3

[0067] Example 3 includes the subject matter of any one of Examples 1 and 2, wherein the current bias component includes a third transistor, integrated transistor, or integrated inductor configured as an edge The same path provides a current source for the bias current to the first transistor and the second transistor.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A high linearity push-pull common gate amplifier is described. The amplifier is configured to provide a high output impedance through a pushing stage having a first transistor of a first transistor type and a pulling stage having a second transistor of a second transistor type, wherein the second transistor type is different from the first transistor type. The first transistor and the second transistor are coupled in a common gate configuration. The first transistor and the second transistor are coupled together via a capacitor coupled to the input and share a common current path as a push-pull current multiplexed cascode low noise amplifier with wideband input matching.

Description

technical field [0001] The present disclosure relates to amplification devices, and more particularly, to push-pull common-gate amplifiers with high linearity. Background technique [0002] Driven by 3GPP technology, the demand for multi-carrier aggregation to achieve faster data rates continues to rise. This increases the complexity of a cellular transceiver (eg, in the case of three carrier aggregation, eg, a cellular transceiver with three corresponding local oscillator (LO) distribution chains). Furthermore, for mobile communications, the frequency coverage of cellular transceivers and the number of frequency bands to be supported continue to increase. Each frequency band has its own assigned duplexer bandpass filter, which has a very steep characteristic. For each duplexer mounted on a printed circuit board (PCB), it is also provided with a corresponding receiver input port. Consequently, the number of input receiver ports on integrated transceivers has also steadily...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F1/22H03F1/56H03F3/193H03F3/24
CPCH03F1/223H03F1/56H03F3/193H03F3/245H03F2200/222H03F2200/318H03F1/0272H03F1/0283H03F1/08H03F3/195H03F3/211H03F3/3001H03F3/45179H03F2200/111H03F2200/216H03F2200/451H03F2200/72H03F2203/30081H03F2203/45018H03F2203/45032H03F2203/45091H03F2203/45156H03F2203/45236H03F2203/45268H03F2203/45278H03F2203/45306H03F2203/45318H03F2203/45511H03F2203/45544H03F2203/45554H03F2203/45562H03F2200/294H03F2203/30027H03F3/265H03F1/0233H03F1/0216H03F2200/121H03F2203/30063
Inventor 瓦迪姆·伊萨科夫康拉德·赫希赫伯特·施托金格哈拉尔德·多普科
Owner APPLE INC