Supercharge Your Innovation With Domain-Expert AI Agents!

Semiconductor device

A technology of semiconductors and inductors, which is applied in transmission systems, electrical components, etc., can solve the problem of increasing the occupied area and achieve the effect of reducing the occupied area

Active Publication Date: 2019-12-13
RENESAS ELECTRONICS CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The device according to the prior art has the problem of an increase in the footprint of the semiconductor device in which the matching circuit and the filter are incorporated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Hereinafter, a first embodiment will be described with reference to the drawings. In the first embodiment, an example in which a matching circuit is used as a balun including balanced-to-unbalanced conversion is described. Specifically, the primary inductor of the matching circuit is used as an inductor on the balanced side, and the secondary inductor of the matching circuit is used as an inductor on the unbalanced side. Figure 8 is a view showing the structure of the semiconductor device according to the first embodiment. exist Figure 8 In , solid lines represent wires of one wiring layer, and hollow lines represent wires of another wiring layer. Such as Figure 8 As shown, the semiconductor device SD100 has an inductor L101, an inductor L102, and an inductor L103 on the plane of the semiconductor substrate.

[0068] The inductor L101 is an inductor on the balanced side of the matching circuit and connects P1P and P1N as terminals. The inductor L102 is an induct...

no. 2 example

[0123] Figure 16 is a view showing the structure of the semiconductor device according to the second embodiment. exist Figure 16 In , solid lines represent wires of one wiring layer, and hollow lines represent wires of another wiring layer. Such as Figure 16 As shown, the semiconductor device 200 has an inductor L201, an inductor L202, and an inductor L203 on the plane of the semiconductor substrate.

[0124] The inductor L201 is an inductor on the balanced side of the matching circuit and connects P1P and P1N as terminals. The inductor L202 is an inductor on the unbalanced side of the matching circuit and connects P2P and P2N as terminals.

[0125] The inductor L203 is an inductor forming a filter and connects P2P and P3 as terminals. Therefore, one ends of the inductor L202 and the inductor L203 are connected to each other, and they have P2P as an output terminal.

[0126] exist Figure 16 , the inductor L201 has two turns, the inductor L202 has three turns, and th...

no. 3 example

[0132] Figure 17 is a view showing the structure of the semiconductor device according to the third embodiment. exist Figure 17 In , solid lines represent wires of one wiring layer, and hollow lines represent wires of another wiring layer. Such as Figure 17 As shown, the semiconductor device 300 has an inductor L301, an inductor L302, and an inductor L303 on the plane of the semiconductor substrate.

[0133] The inductor L301 is an inductor on the balanced side of the matching circuit and connects P1P and P1N as terminals. The inductor L302 is an inductor on the unbalanced side of the matching circuit and connects P2P and P2N as terminals.

[0134] The inductor L303 is an inductor forming a filter and connects P2P and P3 as terminals. Therefore, one ends of the inductor L302 and the inductor L303 are connected to each other, and they have P2P as an output terminal.

[0135] exist Figure 17 , the inductor L301 has two turns, the inductor L302 has three turns, and the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device (10) includes a transmitting circuit (12) that converts transmission data into a transmission signal with a specified frequency, an amplifier (13) that amplifies a power of the transmission signal, a matching circuit (14) that converts the transmission signal from a balanced signal to an unbalanced signal, and a filter circuit (14) that restricts a frequency band of the transmission signal. The matching circuit includes a primary inductor and a secondary indictor, the filter circuit includes an inductor for a filter, and the primary inductor, the secondary indictor and the inductor for a filter are wound substantially concentrically on one plane.

Description

technical field [0001] The present invention relates to a semiconductor device and a radio communication device, and, for example, to a semiconductor device and a radio communication device that perform matching and filtering. Background technique [0002] There is currently an increasing demand for computer equipment using radios such as Bluetooth (registered trademark). Furthermore, since radio circuits are required to be built into one chip for incorporation into wearable devices, the incorporation of radio circuits into semiconductor devices such as microcomputers, SoC (System on Chip), etc. is increasing. [0003] A radio circuit incorporated into a semiconductor device converts a balanced signal into an unbalanced signal using a matching circuit and further performs impedance matching, and then transmits the unbalanced signal from an antenna. For example, a radio circuit incorporated into a semiconductor device and including a matching circuit is described in "A 2.4-G...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04B1/40H04B1/3827
CPCH04B1/3827H04B1/385H04B1/0458H04B1/0475
Inventor 松野典朗
Owner RENESAS ELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More