Detection method and detection device for polysilicon crystal plane index
A technology of crystal plane index and detection method, applied in the semiconductor field, can solve the problems of high instrument cost, low precision, and inability to measure the position of the crystal orientation, and achieve the effect of fast detection speed, high efficiency and low cost
Active Publication Date: 2018-03-27
深圳市石金科技股份有限公司
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Problems solved by technology
The beam spot diameter of X-ray diffraction technology is on the order of millimeters, so X-ray diffraction technology cannot measure the crystal orientation of micron-scale grains, only large grains can be measured, and the position of the specific crystal orientation cannot be measured.
Electron backscatter diffraction analysis technology can measure the crystal orientation of micron-scale grains, but the cost of the instrument is too high, and the accuracy is lower than that of X-rays
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[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings.
[0036] The acidic texturing solution has anisotropic corrosion on different crystal planes of the silicon wafer. During the etching process of the silicon wafer, since the silicon atom on the (100) crystal plane has two dangling bonds, and the (111) crystal plane The silicon atom in the silicon atom has only one dangling bond, so the ability of the silicon atom on the (100) crystal plane to lose electrons is stronger than that of the silicon atom on the (111) crystal plane, so the {111} crystal face family of silicon will be exposed, and finally form pits. The surface of the pit is the crystal plane to be tested, and the side face of the pit belongs to the {111} crystal plane family.
[0037] According to the shape of the pit, the fol...
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The invention provides a detection method and a detection device for polycrystalline silicon crystal plane index. The detection method includes the following steps: 1) Using surface morphology analysis technology to obtain the morphology of pits on the surface of polycrystalline silicon after anisotropic texturing. ; 2) Determine the cross-sectional view of the morphology of the pits; 3) Determine the crystal plane index of the polysilicon surface based on the cross-sectional view. The detection method of the present invention has no limit on the size of crystal grains, has low detection cost, can intuitively and accurately obtain the crystal plane index according to the shape of pits, and has fast detection speed and high efficiency.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a detection method and a detection device for the crystal plane index of a silicon wafer. Background technique [0002] As we all know, using solar power to generate electricity has many advantages. In order to make solar cells have a larger market and be accepted by consumers, in addition to improving the photoelectric conversion efficiency of solar cells, reducing costs is also a goal pursued at present. [0003] Judging from the current market share, polysilicon has always occupied most of the solar cell market share, and will still maintain its leading position in the foreseeable future. The main reason is that large-volume square polycrystalline silicon can be obtained by casting method and direct solidification method, and the cost of polycrystalline silicon wafers is low. It is the main selection subject of the market. Different crystal plane structures on polycrystalline ...
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IPC IPC(8): G01N33/00
CPCG01N33/00G01N33/0095
Inventor 陈全胜刘尧平杨丽霞陈伟吴俊桃杜小龙
Owner 深圳市石金科技股份有限公司