Interface terminal of thin-film capacitor

A film capacitor and interface terminal technology, which is applied in the field of new energy vehicle motor drivers, can solve problems such as difficult to meet the performance requirements of motor drivers and large equivalent inductance values ​​of capacitors, and achieve simple structure, lower equivalent inductance values, and convenient manufacturing Effect

Inactive Publication Date: 2016-09-21
SHANGHAI EAGTOP ELECTRONICS TECH
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned setting of the IGBT interface terminal with a separate structure makes the equivalent inductance of the capacitor relatively large, and sometimes it is difficult to meet the performance requirements of the motor driver

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Interface terminal of thin-film capacitor
  • Interface terminal of thin-film capacitor
  • Interface terminal of thin-film capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Below in conjunction with specific embodiment, further illustrate the present invention. It should be understood that these examples are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the teachings of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

[0024] figure 2 The schematic diagram of the interface terminal structure of the film capacitor provided in this embodiment, the interface terminal structure of the film capacitor includes a shell 1, combined with image 3 , the busbar 5 is connected to the positive and negative poles of the capacitor core 6 by welding, the two poles of the busbar 5 are insulated by polyethylene terephthalate (PET) insulating paper 7, and the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an interface terminal of a thin film capacitor, which includes a shell, and a bus bar is arranged in the shell, and a DC bus bar interface terminal and an IGBT interface terminal are drawn out from the bus bar. The interface terminals are all composed of a vertical connection plate connected to the busbar and a horizontal connection plate for connecting IGBTs. The positive and negative interface terminals are separated by an insulating plate. Since the area of ​​the current loop is proportional to the inductance, changing the IGBT interface terminal from the horizontal setting to the vertical setting can reduce the loop area, thereby reducing the loop inductance accordingly. The interface terminal provided by the invention overcomes the shortcomings of the prior art, effectively reduces the equivalent inductance value of the film capacitor, and meanwhile has simple structure, convenient processing and manufacturing, and low cost.

Description

technical field [0001] The invention relates to a new type of interface terminal for a thin film capacitor. The interface terminal and the thin film capacitor have an integrated structure, which is used to realize the direct connection between the thin film capacitor and the insulated gate bipolar transistor (IGBT), and is mainly used in new energy vehicle motor driver technology field. Background technique [0002] New energy vehicles, whether hybrid (HEV), hydrogen or pure electric, require motor drive modules, which require capacitors, especially film capacitors, for filtering and support. The film capacitor core uses an organic film as an insulating medium, and a metal layer evaporated on the surface of the organic film as an electrode, which is wound in pairs. The two poles of the busbar and the two poles of the capacitor core are welded for an integrated design, and the DC bus interface terminals and IGBT interface terminals are led out. [0003] At present, the inte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/228H01G4/33
CPCH01G4/228H01G4/33
Inventor 洪英杰胡波王伟旭
Owner SHANGHAI EAGTOP ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products