An adiabatic ecrl structure type jk flip-flop based on finfet device
A structural and flip-flop technology, applied in the direction of electrical components, pulse technology, pulse generation, etc., can solve the problems of energy loss, loss, circuit area, delay, power consumption and large power consumption delay product, etc., to achieve reduction Effect of energy loss, good charging or recycling
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Embodiment 1
[0023] Embodiment one: if Figure 4As shown, a JK flip-flop based on the adiabatic ECRL structure of FinFET devices includes a first P-type FinFET tube P1, a second P-type FinFET tube P2, a first N-type FinFET tube N1, a second N-type FinFET tube N2, and a second N-type FinFET tube N2. The third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6, the seventh N-type FinFET tube N7, the eighth N-type FinFET tube N8, the ninth N-type tube Type FinFET tube N9, the tenth N-type FinFET tube N10, the eleventh N-type FinFET tube N11, the twelfth N-type FinFET tube N12, and the thirteenth N-type FinFET tube N13; the source of the first P-type FinFET tube P1 , the source of the second P-type FinFET transistor P2, the source electrode of the sixth N-type FinFET transistor N6, and the source electrode of the seventh N-type FinFET transistor N7 are connected, and the connection end is the first power of the adiabatic EC...
Embodiment 2
[0025] Embodiment two: if Figure 4 As shown, a JK flip-flop based on the adiabatic ECRL structure of FinFET devices includes a first P-type FinFET tube P1, a second P-type FinFET tube P2, a first N-type FinFET tube N1, a second N-type FinFET tube N2, and a second N-type FinFET tube N2. The third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6, the seventh N-type FinFET tube N7, the eighth N-type FinFET tube N8, the ninth N-type tube Type FinFET tube N9, the tenth N-type FinFET tube N10, the eleventh N-type FinFET tube N11, the twelfth N-type FinFET tube N12, and the thirteenth N-type FinFET tube N13; the source of the first P-type FinFET tube P1 , the source of the second P-type FinFET transistor P2, the source electrode of the sixth N-type FinFET transistor N6, and the source electrode of the seventh N-type FinFET transistor N7 are connected, and the connection end is the first power of the adiabatic E...
Embodiment 3
[0028] Embodiment three: as Figure 4 As shown, a JK flip-flop based on the adiabatic ECRL structure of FinFET devices includes a first P-type FinFET tube P1, a second P-type FinFET tube P2, a first N-type FinFET tube N1, a second N-type FinFET tube N2, and a second N-type FinFET tube N2. The third N-type FinFET tube N3, the fourth N-type FinFET tube N4, the fifth N-type FinFET tube N5, the sixth N-type FinFET tube N6, the seventh N-type FinFET tube N7, the eighth N-type FinFET tube N8, the ninth N-type tube Type FinFET tube N9, the tenth N-type FinFET tube N10, the eleventh N-type FinFET tube N11, the twelfth N-type FinFET tube N12, and the thirteenth N-type FinFET tube N13; the source of the first P-type FinFET tube P1 , the source of the second P-type FinFET transistor P2, the source electrode of the sixth N-type FinFET transistor N6, and the source electrode of the seventh N-type FinFET transistor N7 are connected, and the connection end is the first power of the adiabatic...
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