Unlock instant, AI-driven research and patent intelligence for your innovation.

Fabrication of Porous Silicon Nitride Support Membrane Window Panes

A technology of silicon nitride and supporting membrane, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problems of different porous sizes, complicated operation, high cost, etc., and achieve the effect of uniform porous aperture, simple procedure and low cost

Active Publication Date: 2018-12-21
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The membrane produced by this method has some disadvantages: 1. Due to the method of self-assembly, the pore sizes produced are not uniform, and the stress that the membrane can withstand is reduced, and it is easy to break; 2. The procedure is too large. Many, and it is easy to leave impurities
3. The cost is too high, and the operation has potential safety hazards
[0009] This method also has some shortcomings: 1. The self-assembly method produces pores of different sizes, which can withstand uneven stress and are easy to break; 2. The rapid heating and crystallization of amorphous silicon may affect the quality of SiN; 3. Finally One-step porous silicon nitride is prone to cracking when taken out of the etchant
[0010] Although techniques such as FIB, FEB, and EBL can precisely realize the preparation of controllable nanoporous support membranes, the efficiency is too low to be suitable for commercial production.
Although self-assembly methods such as CsCl and amorphous silicon crystallization can prepare large-area nanoporous support membranes, they have the disadvantages of uneven pore size, complicated operation, potential safety hazards, and many side effects on the membrane.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication of Porous Silicon Nitride Support Membrane Window Panes
  • Fabrication of Porous Silicon Nitride Support Membrane Window Panes
  • Fabrication of Porous Silicon Nitride Support Membrane Window Panes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The present invention will be further illustrated by specific examples below, but it should be understood that these examples are only used for more detailed description, and should not be construed as limiting the present invention in any form.

[0040] This section provides a general description of the materials and test methods used in the tests of the present invention. While many of the materials and methods of manipulation which are employed for the purposes of the invention are well known in the art, the invention has been described here in as much detail as possible. It will be apparent to those skilled in the art that, in the context and context, the materials used and methods of operation used in the present invention are known in the art unless otherwise indicated.

[0041] The instruments used in the following examples are as follows:

[0042] instrument:

[0043] Transmission electron microscope, purchased from FEI Company, model Philips-CM200.

[0044] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a porous silicon nitride supporting membrane pane. The porous silicon nitride supporting membrane pane comprises a substrate, front silicon nitride which covers one surface of the substrate, back silicon nitride which covers the other surface of the substrate and a window which penetrates through the substrate and the back silicon nitride. The front silicon nitride is provided with multiple through holes. The hole diameter and the hole distance of the through holes are controllable. According to the prepared porous silicon nitride supporting membrane pane, the hole diameter of the multiple generated holes is uniform and a supporting membrane has no residual impurity. The invention also provides a preparation method of the porous silicon nitride supporting membrane pane and a product or device used for transmission electronic microscope imaging.

Description

technical field [0001] The invention relates to a silicon nitride support film pane, in particular to a porous silicon nitride support film pane, and a preparation method and application of the porous silicon nitride support film. Background technique [0002] Compared with the traditional copper mesh microgrid, the silicon nitride support film window pane for transmission electron microscopy has the characteristics of high melting point, strong chemical inertness, and high strength. It is mainly used for in-situ heating, liquid environment or transmission electron microscopy of carbon-containing samples ( TEM) observation experiment. [0003] The non-porous traditional silicon nitride support film pane has been widely used in various transmission electron microscopy experiments due to its excellent physical and chemical properties. Because it can remain stable at very high temperatures (up to about 1000 degrees Celsius, related to the quality and thickness of the film), it...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/20
CPCH01J37/20H01J2237/20
Inventor 时金安谷林
Owner INST OF PHYSICS - CHINESE ACAD OF SCI