Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method

一种液体组合物、化合物的技术，应用在钨和低介电常数层间绝缘膜的液体组合物,半导体元件的制造领域，能够解决钨防腐蚀效果不充分、氮化钛去除性低等问题

Active Publication Date: 2016-09-28
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in reference document 3, there are problems such as low removability of titanium nitride and insufficient anticorrosion effect of tungsten

Method used

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  • Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method
  • Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method
  • Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0190] 8.53 kg of pure water, 1.0 kg of 0.02 mol / L potassium permanganate solution (manufactured by Wako Pure Chemical Industries, Ltd., special grade, molecular weight 158.03) as component (A) and 1.0 kg as (B) were put into a polypropylene container with a capacity of 10 L. 40 mass % ammonium fluoride solution (manufactured by Morita Chemical Industry Co., Ltd., semiconductor grade, molecular weight 37.04) 0.0375 kg of components, Surflon S-241 (30 mass % product, trade name, AGC SEIMI CHEMICAL CO. ., LTD. perfluoroalkyl amine oxide) 0.0033kg, Phosphaol RS-710 (trade name, polyoxyethylene phosphate manufactured by Toho Chemical Industry Co., Ltd.) as (C2) component 0.001kg and (D) 0.426 kg of 47 mass % sulfuric acid (manufactured by Wako Pure Chemical Industries, Ltd., special grade, molecular weight 98.08) of the component. Stirring was performed to confirm the dissolution of each component, and a liquid composition was prepared. The resulting liquid composition had a pH o...

Embodiment 2～41

[0193] The washing|cleaning process was performed similarly to Example 1 except having prepared the liquid composition of the compounding quantity shown in Tables 1-7. The evaluation results are shown in Tables 1-7. SEM was used to observe the cross-section of the cleaned substrate. As a result, all substrates cleaned with the liquid composition had titanium nitride completely removed, and no corrosion of tungsten and low dielectric constant interlayer insulating films was observed.

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Abstract

This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like. The mass concentration of potassium permanganate in the abovementioned oxidizing agent (A) is between 0.001% and 0.1%, inclusive, and the mass concentration of the abovementioned fluorine compound (B) is between 0.01% and 1%, inclusive.

Description

technical field [0001] The present invention relates to a liquid composition, and more specifically, to a liquid for removing titanium nitride used in a hard mask without corroding tungsten and a low-permittivity interlayer insulating film used in wiring in a manufacturing process of a semiconductor element A composition, a method of cleaning a semiconductor element using the same, and a method of manufacturing a semiconductor element. Background technique [0002] In the manufacture of semiconductor substrates, various materials are used regardless of the types of organic materials and inorganic materials, among which tungsten and titanium nitride are used. In recent years, for example, a method of using tungsten as a wiring material and titanium nitride as a hard mask has been studied. [0003] In a semiconductor substrate where tungsten and titanium nitride coexist on the surface, for example, when tungsten is used as wiring and titanium nitride is used as a hard mask, i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304C09K13/08C11D1/22C11D1/29C11D1/34C11D1/40C11D1/62C11D1/75C11D1/90C11D1/92C11D3/04C11D3/24C11D3/39C23F11/04H01L21/308
CPCC23G1/061C23G1/106H01L21/02063H01L21/31144H01L21/32134C11D3/3947C11D1/006C11D1/29C11D1/345C11D3/0073C11D7/08C11D7/3209C11D7/36C11D2111/22C11D3/122C11D3/245C11D7/10H01L21/76814
Inventor 玉井聪岛田宪司
Owner MITSUBISHI GAS CHEM CO INC
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