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Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing device and substrate technology, which are applied in semiconductor/solid-state device manufacturing, folders, electrical components, etc., can solve problems such as pattern size miniaturization

Active Publication Date: 2016-10-12
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the pattern size has been significantly miniaturized

Method used

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  • Substrate processing apparatus and method of manufacturing semiconductor device
  • Substrate processing apparatus and method of manufacturing semiconductor device
  • Substrate processing apparatus and method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0035] Hereinafter, a first embodiment of the present invention will be described.

[0036]

[0037] The structure of the substrate processing apparatus 100 of this embodiment is shown in figure 1 . Such as figure 1 As shown, the substrate processing apparatus 100 is configured as a monolithic substrate processing apparatus.

[0038] (processing container)

[0039] Such as figure 1 As shown, the substrate processing apparatus 100 includes a processing vessel 202 . The processing container 202 is configured, for example, as a closed container having a circular cross section and a flat shape. In addition, the processing container 202 is made of metal materials such as aluminum (Al) and stainless steel (SUS), for example. Formed in the processing container 202 are: a reaction zone 201 (reaction chamber) for processing a wafer 200 such as a silicon wafer as a substrate; The processing container 202 is composed of an upper container 202a and a lower container 202b.

[004...

no. 2 approach

[0139] Next, use Figure 9 Next, a second embodiment will be described. Figure 9 It is an enlarged view of the tube front end 261a.

[0140] First, use Figure 12 A comparative example will be described. Arrow 301 indicates the flow of gas (gas containing the first element) outside the tube 261 , and arrow 302 indicates the flow of gas (gas containing the second element) supplied from the inside of the tube 261 .

[0141] Since the tip 303 is angular, the gas containing the first element supplied in the first processing gas supply step S202 collides with the outer peripheral tip 303 of the tube constituting the tube 261 and adheres thereto. Furthermore, since the tip 303 of the tube 261 is angular, the gas detoured to the tip 304 on the inner peripheral side of the tube 261 collides with and adheres thereto.

[0142] Therefore, when the gas containing the second element is supplied in the second gas supply step S206, the gas containing the second element contacts and reac...

Embodiment approach 3

[0145] Next, use Figure 10 Embodiment 3 will be described. In the present embodiment, the tip of the tube 261 is widened toward the treatment area 201 . With such a structure, since the gas containing the second element flows along the front end, it is easy to merge with the eddy flow flowing on the outer periphery of the tube 261 .

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Abstract

The invention relates to a substrate processing apparatus and a method of manufacturing a semiconductor device. A technology for forming a uniform film in a plane of a substrate involves a substrate processing apparatus including: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover including a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and including a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure.

Description

technical field [0001] The invention relates to a substrate processing device and a method for manufacturing a semiconductor device. Background technique [0002] In recent years, semiconductor devices such as flash memory have a tendency to be highly integrated. Along with this, the pattern size is significantly miniaturized. When forming these patterns, a step of subjecting a substrate to predetermined treatments such as oxidation treatment and nitriding treatment may be performed as one of the manufacturing steps. In these treatments, a gas in a plasma state is used. Contents of the invention [0003] Along with miniaturization, the above-mentioned pattern is required to be uniformly formed in the substrate surface, however, there are cases where plasma is not uniformly supplied in the substrate surface. In this case, it is difficult to form a uniform film on the surface of the substrate. [0004] In view of the above problems, the present invention aims to provide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/02
CPCH01J37/32449H01L21/02186H01L21/02274C23C16/452C23C16/45502C23C16/45508C23C16/45561C23C16/45582H01J37/32357H01J37/3244H01J2237/3323B42F7/04B42F7/06
Inventor 西堂周平
Owner KOKUSA ELECTRIC CO LTD
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