A fast turn-off silicon-on-insulator lateral insulated gate bipolar transistor device

Abstract

A rapid turning-off silicon-on-insulator-lateral insulated gate bipolar transistor (SOI-LIGBT) comprises a buried oxide layer on a P-type substrate, an N-type drift region on the buried layer, a P-type well region and N-type buffer region on the N-type drift region, heavily doped P-type collector region in the N-type buffer region, a heavily doped P-type emitter electrode region and an N-type emitter electrode region in the P-type well region, a gate oxide layer on the surface of the P-type well region, a polysilicon layer on the gate oxide layer, and a first vertical groove which is deep and embedded with oxygen and is arranged in the heavily doped P-type emitter electrode region. The groove is partially extended inward to form first lateral grooves with equal intervals and extending to the drift region. A second vertical groove which is deep and embedded with oxygen is arranged in the heavily doped P-type collector region, and the groove is partially extended inward to form second lateral grooves with equal intervals and extending to the drift region. The grooves are filled with filler which is polysilicon wrapped with an overpressure resistant media. The filler in the drift region is overpressure resistant media.

Description

technical field [0001] The invention mainly relates to the technical field of power semiconductor devices, and is a novel fast-turn-off silicon-on-insulator lateral insulated gate bipolar transistor, which is especially suitable for monolithic integrated power chips and used to realize accurate control of various circuit systems. Background technique [0002] Silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) is a high-speed, power bipolar transistor (BJT) with high current density of power-collecting SOI lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) It is a power device with the advantages of SOI full dielectric isolation, so it has the advantages of simple driving, easy protection, and high switching frequency. Therefore, based on the above advantages, SOI-LIGBT is now widely used in various high-power power electronic equipment. [0003] Since SOI-LIGBT is usually used as a power switching device in integrated...

AI Technical Summary

Problems solved by technology

For Dual LIGBT, when the device is turned off, the second gate will be opened to provide a path for electrons. This structure requires additional control circuits, and it increases the device area and complexity.

Other structures that reduce the off-time will also bring about problems such as reducing the on-current density of the device or insufficient withstand voltage.

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