Method for monitoring metal element content on sidewall of contact hole and wafer
A technology of metal element content and contact holes, which is applied in the direction of electrical components, semiconductor/solid-state device testing/measurement, semiconductor/solid-state device components, etc., can solve the problems of lack of effective detection methods for metal elements on the side walls of contact holes, etc.
Active Publication Date: 2019-01-22
CSMC TECH FAB2 CO LTD
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[0004] Based on this, it is necessary to provide a method for monitoring the content of metal elements on the side wall of the contact hole in view of the current lack of effective detection methods for the metal elements on the side wall of the contact hole.
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[0028] In the semiconductor manufacturing process, in order to test some performances of the prepared semiconductor devices, the area on the wafer (wafer) except the device area is often divided into some areas as test areas. In this embodiment, the test structure (test key) for monitoring the content of metal elements on the sidewall of the contact hole is formed in this area.
[0029] S120, forming a metal silicide on the semiconductor substrate.
[0030] The steps for preparing the metal silicide are the same as the steps for preparing the metal silicide in the semiconductor device manufacturing process. The specific process of step S120 is as follows: Figure 6 As shown, the following sub-steps are included.
[0031] S122, depositing and forming a metal silicide barrier layer on the surface of the semiconductor substrate.
[0032] In this embodiment, the metal silicide blocking layer (Salicide Block, SAB) is a metal silicide (Salicide Black oxide) that has undergone bla...
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Abstract
The invention discloses a method for monitoring a metal element content of a side wall of a contact hole. The method comprises: providing a semiconductor substrate formed in a wafer testing region; forming metal silicide on the semiconductor substrate; carrying out deposition on the surfaces of the metal silicide and the semiconductor substrate to form an interlaminated dielectric layer; etching the interlaminated dielectric layer to form a rectangular hole; exposing the part of metal silicide by the rectangular hole with the side wall being an inclined plane; carrying out pre sputtering on the exposed metal silicide; and collecting a metal element content on the side wall of the rectangular hole. With the method, the metal element content on the side wall of the contact hole can be monitored effectively by collecting the metal elements of the inclined plane. In addition, the invention also discloses a wafer.
Description
technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for monitoring the content of metal elements on the side wall of a contact hole and a wafer. Background technique [0002] In the chip manufacturing process, after the formation of semiconductor devices such as MOS tubes, etc., to enter the metal interconnection part, the first is the formation of contact holes. This part has to go through steps such as the deposition of the interlayer dielectric layer (Inter Layer Dielectric, ILD), the etching of the contact hole, the deposition of the bonding layer of the contact hole, and the filling of metal tungsten. figure 1 It is a cross-sectional view of a semiconductor device after etching a contact hole. figure 2 It is a cross-sectional view of a semiconductor device after deposition to form an adhesive layer, image 3 It is a cross-sectional view of a semiconductor device after filling a contact hole with ...
Claims
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Login to View More IPC IPC(8): H01L21/66H01L23/544
Inventor 李健胡骏
Owner CSMC TECH FAB2 CO LTD