Unlock instant, AI-driven research and patent intelligence for your innovation.

An etching and surface material increasing composite processing device and a method of performing silicon substrate patch antenna processing by utilizing the device

A composite processing and chip antenna technology, applied in the process of producing decorative surface effects, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as low efficiency, reduce costs, improve efficiency, and maintain work positioning constant effect

Inactive Publication Date: 2016-10-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the low efficiency of existing bulk micromachining and surface additive processing, and to provide an etching and surface additive composite processing device and Method for processing silicon substrate patch antenna by using the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An etching and surface material increasing composite processing device and a method of performing silicon substrate patch antenna processing by utilizing the device
  • An etching and surface material increasing composite processing device and a method of performing silicon substrate patch antenna processing by utilizing the device
  • An etching and surface material increasing composite processing device and a method of performing silicon substrate patch antenna processing by utilizing the device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0018] Such as figure 1 As shown, the device of the present invention is supported and fixed by the foundation 1, the workbench bracket 2, and the workbench 3. The workbench 3 is the assembly of other working parts of the device, supported by the workbench bracket 2 and isolated from external vibrations. The vacuum box 4 is fixed on the foundation 1 to cover other working parts, and the internal working space is vacuumized through the vacuum box controller 5. The vacuuming process is carried out before the photolithography process and after the wet etching, and the working space is controlled. The environment is cleaned and maintained.

[0019] The silicon wafer processing table 22, the silicon wafer console 23 and the machine processing operation table 25 are located in the center of the working area of ​​the mechanism; the support frame 15 o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an etching and surface material increasing composite processing device used for processing a high-resistance silicon substrate patch antenna. According to the device, a photoetching machine and a surface material increasing structure are fixed on a working platform, the positioning centers of the photoetching machine and the surface material increasing structure are at the center of a silicon sheet table, the silicon sheet table on the working platform and a control system structure are integrated, a support of the surface material increasing structure is fixed to the silicon sheet table and a main-body rack, support rods are provided with guide-rail slide block structures, shower nozzle connecting rods of the surface material increasing structure are provided with spherical hinges, and the spherical hinges are matched with the guide-rail slide block structures to change X, Y and Z positions of a central shower nozzle to achieve processing and to keep the central shower nozzle away from a light beam so as to avoid influences on working of the photoetching machine. The device adopts a high-resistance silicon substrate microstrip antenna as an application object, integrates photoetching, etching and surface material increasing processes and increases the manufacturing efficiency. The positioning centers of etching and surface material increasing processes are at the center of the silicon sheet table, thus ensuring the positioning precision. The device is particularly effective for bulk micromachining-surface material increasing composite processing.

Description

technical field [0001] The invention relates to the field of micro-electromechanical system processing, in particular to an etching and surface additive composite processing device and a method for processing high-resistance silicon substrate patch antennas using the device. Background technique [0002] The microstrip antenna of the radio frequency communication system made by MEMS technology not only has the advantages of small size, light weight, and low cost, but also can be integrated with the transmitting and receiving system to improve the stability and reliability of the system, and is easy to mass-produce. Production. High-resistance silicon is used as the base material, and air grooves are dug directly under the radiation patch to reduce the composite dielectric constant of the base, which not only ensures the low dielectric constant of the base material, but also ensures integration, and realizes micro With antenna high efficiency, high gain, high power. In this...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00H01Q1/38
CPCB81C1/00373B81C1/00103H01Q1/38
Inventor 黎业飞韩家升阚宝铎徐冲章桀司超杰
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA