Wafer Level optoelectronic device packages and methods for making the same

A technology for optoelectronic devices and wafers, used in semiconductor/solid-state device manufacturing, electrical solid-state devices, electrical components, etc., can solve problems such as increased manufacturing cost, high yield, loss, etc., to achieve low cost, reduced bill of materials, and high yield. the effect of making

Inactive Publication Date: 2016-10-26
INTERSIL INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] from figure 1 Describing an exemplary prior art optical proximity sensor 102, it can be appreciated that current packaging of optical proximity sensors involves many components and many process steps, which increases the bill of materials, escalates manufacturing costs, increases cycle times, and results in high yield loss

Method used

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  • Wafer Level optoelectronic device packages and methods for making the same
  • Wafer Level optoelectronic device packages and methods for making the same
  • Wafer Level optoelectronic device packages and methods for making the same

Examples

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Embodiment Construction

[0085] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0086] Priority Application: This application claims priority over U.S. Patent Application No. 14 / 749,169, filed June 24, 2015, and U.S. Provisional Patent Application No. 62 / 148,575, filed April 16, 2015 right.

[0087] include section image 3 (a) to image 3 (i) image 3 It will now be used to illustrate the fabrication of optoelectronic devices (and, more particularly, a plurality of such devices) according to certain embodi...

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PUM

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Abstract

Described herein are methods for fabricating a plurality of optoelectronic devices, and the optoelectronic devices resulting from such methods. One such method includes performing through silicon via (TSV) processing on a wafer, which includes a plurality of light detector sensor regions, to thereby form a plurality of vias, and then tenting and plating the vias and performing wafer back metallization. Thereafter, plurality of light source dies are attached to a top surface of the wafer, and a light transmissive material is then molded to encapsulate the light detector sensor regions and the light sensor dies therein. Additionally, opaque barriers including opaque optical crosstalk barriers are fabricated. Further, solder balls or other electrical connectors are attached to the bottom of the wafer. The wafer is eventually diced to separate the wafer into a plurality of optoelectronic devices.

Description

technical field [0001] Embodiments of the present invention generally relate to wafer-level optoelectronic packaging and methods of manufacturing the same. Background technique [0002] figure 1 Is a perspective view of an exemplary prior art optical proximity sensor 102 including a cover 122 shown removed. The sensor 102 includes a light source die 104 and a light detector die 106 spaced apart from each other and attached to a base substrate 108 , such as a printed circuit board (PCB). The light source die 104 is encapsulated in a transparent epoxy 114 , and the light detector die 106 is individually encapsulated in a transparent epoxy 116 . A gap 112 exists between the transparent epoxy 116 covering the photodetector die 106 and the transparent epoxy 118 covering the light source die 104, wherein the gap 112 accepts a crosstalk barrier when the cover 122 is attached to the substrate 108. 132 (which is part of the cover 122). Cap 122 , possibly made of metal, includes a...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L21/784
CPCH01L21/77H01L21/784H01L24/94H01L24/97H01L25/167H01L31/167H01L2224/48091H01L2224/48145H01L2924/181H01L2924/00012H01L2924/00014G01V8/12
Inventor 斯里·加尼许·A·塔伦玛琳甘
Owner INTERSIL INC
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