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Manufacturing method of tft backplane and tft backplane

A manufacturing method and backplane technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor electron mobility, uneven brightness, uneven distribution, etc., achieve low leakage current, improve electronic Mobility and current output uniformity, and the effect of improving the uniformity of luminescence

Active Publication Date: 2019-04-02
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Application Information

AI Technical Summary

Problems solved by technology

However, the ELA crystallization technology cannot effectively control the uniformity of the crystal lattice and the crystallization direction of the crystal lattice, so the distribution of crystallization on the entire substrate is very uneven, resulting in long-term inhomogeneity of the display effect and uneven brightness ( mura appears
[0006] Oxide Semiconductor (Oxide Semiconductor) is also a good material for TFT active layer. It has the characteristics of fast switching and low leakage current, but its electron mobility is slightly poor, which makes it slightly inferior in driving OLED

Method used

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  • Manufacturing method of tft backplane and tft backplane
  • Manufacturing method of tft backplane and tft backplane
  • Manufacturing method of tft backplane and tft backplane

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Embodiment Construction

[0047] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0048] see figure 1 , the present invention at first provides a kind of manufacture method of TFT backplane, comprises the steps:

[0049] Step 1, such as figure 2 As shown, a base substrate 10 is provided, and a first gate 21 and a second gate 22 are formed at intervals on the base substrate 10, and the first gate 21, the second gate 22, and the A gate insulating layer 30 is deposited on the substrate 10 , and an amorphous silicon thin film 31 is deposited on the gate insulating layer 30 .

[0050] Specifically, the base substrate 10 is a glass substrate.

[0051] Specifically, the step 1 further includes: cleaning and baking the base substrate 10 before depositing other structural layers on the base substrate 10 .

[0052] Preferably, t...

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Abstract

The invention provides a method for manufacturing a TFT backplane and the TFT backplane. By using an oxide semiconductor to make a switch TFT, the advantages of rapid switching and low leakage current of the oxide semiconductor are used to increase the switching speed of the switch TFT and reduce its Leakage current: By using polysilicon to make the driving TFT, the use of polysilicon has the characteristics of high electron mobility and uniform grains to improve the electron mobility and current output uniformity of the driving TFT, which is conducive to improving the uniformity of light emission of the OLED device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a TFT backplane and the TFT backplane. Background technique [0002] OLED (Organic Light-Emitting Diode, organic light-emitting diode) display, also known as organic electroluminescence display, is a new flat panel display device, because of its simple preparation process, low cost, low power consumption, high luminous brightness, Wide range of working temperature, light and thin size, fast response speed, easy to realize color display and large-screen display, easy to realize matching with integrated circuit driver, easy to realize flexible display, etc., so it has broad application prospects. [0003] According to the driving method, OLED can be divided into two categories: passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED), namely direct addressing and thin film transistor matrix addressing. Among ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/32
CPCH10K59/12H01L21/77H01L27/12
Inventor 张晓星周星宇徐源竣
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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