Stripping Method And Ultrasonic Vibration Angle
An ultrasonic wave and peeling layer technology, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve problems such as time-consuming, difficult epitaxial substrate peeling, and undisclosed transfer of optical device layers, etc., to achieve easy The effect of relocation and efficiency improvement
Active Publication Date: 2016-11-02
DISCO CORP
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Problems solved by technology
[0009] Here, the invention of Patent Document 3 does not disclose the content of transferring the optical device layer at all, and there is a problem that it takes too much time in the method including the process in water.
In addition, when the diameter of the optical device wafer exceeds 2 inches and is formed at 4 inches or 6 inches, it is difficult to peel the epitaxial substrate from the optical device layer.
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[0052] figure 1 (A) and figure 1 The optical device wafer 10 shown in (B) includes: an epitaxial substrate 11 composed of, for example, a disc-shaped sapphire substrate with a diameter of 4 inches and a thickness of 600 μm; an optical device layer 12 laminated on the front surface of the epitaxial substrate 11 11a side. The optical device layer 12 is composed of an n-type gallium nitride semiconductor layer 12A and a p-type gallium nitride semiconductor layer 12B formed on the front surface 11a of the epitaxial substrate 11 by epitaxial growth figure 1 (A) not shown) structure. When the epitaxial substrate 11 is stacked with an optical device layer 12 having a thickness of, for example, 10 μm, a buffer layer 13 made of GaN and having a thickness of, for example, 1 μm is formed between the front surface 11 a of the epitaxial substrate 11 and the p-type gallium nitride semiconductor layer 12B (in figure 1not shown in (A)). In the optical device layer 12, an optical device 16...
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The invention provides a stripping method and an ultrasonic vibration angle. The method comprises the following steps: a step for connecting a transfer substrate, the front side (12a) of an optical device layer is connected to the transfer substrate (20) beyond a bonding layer (21); a step for forming a stripping layer, laser light with wavelength which has permeability for the epitaxial substrate (11) and absorptiveness for a buffer layer (13) is irradiated from the back side (11a) of an epitaxial substrate (11) of an optical device wafer (10) which is connected to the transfer substrate (20); a step for transferring an optical device layer, the ultrasonic vibration angle (40) with the shape for surrounding the external periphery (11c) of the epitaxial substrate (11) contacts the back side (11d) of the external periphery (11c), so that the epitaxial substrate (11) is vibrated, the epitaxial substrate (11) is stripped from the transfer substrate (20), and the optical device layer (12) is transferred to the transfer substrate (20).
Description
technical field [0001] The present invention relates to a peeling method for transferring an optical device layer laminated on the front surface of an epitaxial substrate via a buffer layer to a transfer substrate, and an ultrasonic vibration angle used in the method. Background technique [0002] In the manufacturing process of optical devices, an n-type semiconductor layer and a p-type semiconductor layer made of GaN (gallium nitride) etc. The constituted optical device layer forms an optical device wafer by forming optical devices such as light emitting diodes and laser diodes in a plurality of regions defined by a plurality of dicing lines formed in a grid pattern. Furthermore, individual optical devices are manufactured by dividing the optical device wafer along dicing lines (for example, refer to Patent Document 1). [0003] In addition, as a technique for improving the brightness of an optical device, there is an optical device manufacturing method called lift-off in...
Claims
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Login to View More IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68386
Inventor 小柳将邱晓明田篠文照
Owner DISCO CORP